Effect of gallium content on bias stress stability of solution-deposited Ga-Sn-Zn-O semiconductor transistors

Youngmin Jeong; Keunkyu Song; Taehwan Jun; Sunho Jeong; Jooho Moon

doi:10.1016/j.tsf.2011.04.030

Effect of gallium content on bias stress stability of solution-deposited Ga-Sn-Zn-O semiconductor transistors

Youngmin Jeong, Keunkyu Song, Taehwan Jun, Sunho Jeong, Jooho Moon

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

44 Citations (Scopus)

Abstract

We generated solution-processed thin film transistor (TFTs) using gallium tin zinc oxide (GTZO, Ga-Sn-Zn-O) layers as the channel that exhibit improved bias-stress stability during device operation under ambient conditions. The cause of the bias-stress stability was investigated through comparisons with zinc tin oxide (ZTO, Zn-Sn-O)-based TFTs, which suffer red from bias stress instability. Based on in-depth analysis of the electrical characteristics and chemical structure of both GTZO and ZTO layers, it was discovered that the GTZO layers had a significantly lower oxygen vacancy concentration than did the ZTO layer, which influenced the electrical performance of the GTZO transistors as well as their bias-stress stability. When 5 mol% gallium was added, a bias stress-stable transistor was obtained, exhibiting typical semiconductor behavior with a field-effect mobility of 1.2 cm² V^{- 1} s ^{- 1}, on/off ratio of 10⁶, off-current of 1 × 10 ^{- 10} A, and threshold voltage of 19.6 V. Further doping of Ga deteriorated the device performance, which was found to be associated with decreased carrier concentration and segregation of an insulating secondary phase.

Original language	English
Pages (from-to)	6164-6168
Number of pages	5
Journal	Thin Solid Films
Volume	519
Issue number	18
DOIs	https://doi.org/10.1016/j.tsf.2011.04.030
Publication status	Published - 2011 Jul 1

Bibliographical note

Funding Information:
This work was supported by the Mid-Career Researcher Program through an NRF grant funded by the MEST (No. 2009-0086302 ). It was also partly supported by the Second Stage of the Brain Korea 21 Project . In addition, we acknowledge the Pohang Accelerator Laboratory (PAL) for conducting the GI-XRD measurements.

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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10.1016/j.tsf.2011.04.030

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title = "Effect of gallium content on bias stress stability of solution-deposited Ga-Sn-Zn-O semiconductor transistors",

abstract = "We generated solution-processed thin film transistor (TFTs) using gallium tin zinc oxide (GTZO, Ga-Sn-Zn-O) layers as the channel that exhibit improved bias-stress stability during device operation under ambient conditions. The cause of the bias-stress stability was investigated through comparisons with zinc tin oxide (ZTO, Zn-Sn-O)-based TFTs, which suffer red from bias stress instability. Based on in-depth analysis of the electrical characteristics and chemical structure of both GTZO and ZTO layers, it was discovered that the GTZO layers had a significantly lower oxygen vacancy concentration than did the ZTO layer, which influenced the electrical performance of the GTZO transistors as well as their bias-stress stability. When 5 mol% gallium was added, a bias stress-stable transistor was obtained, exhibiting typical semiconductor behavior with a field-effect mobility of 1.2 cm2 V- 1 s - 1, on/off ratio of 106, off-current of 1 × 10 - 10 A, and threshold voltage of 19.6 V. Further doping of Ga deteriorated the device performance, which was found to be associated with decreased carrier concentration and segregation of an insulating secondary phase.",

author = "Youngmin Jeong and Keunkyu Song and Taehwan Jun and Sunho Jeong and Jooho Moon",

note = "Funding Information: This work was supported by the Mid-Career Researcher Program through an NRF grant funded by the MEST (No. 2009-0086302 ). It was also partly supported by the Second Stage of the Brain Korea 21 Project . In addition, we acknowledge the Pohang Accelerator Laboratory (PAL) for conducting the GI-XRD measurements.",

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AU - Jeong, Youngmin

AU - Song, Keunkyu

AU - Jun, Taehwan

AU - Jeong, Sunho

AU - Moon, Jooho

N1 - Funding Information: This work was supported by the Mid-Career Researcher Program through an NRF grant funded by the MEST (No. 2009-0086302 ). It was also partly supported by the Second Stage of the Brain Korea 21 Project . In addition, we acknowledge the Pohang Accelerator Laboratory (PAL) for conducting the GI-XRD measurements.

PY - 2011/7/1

Y1 - 2011/7/1

N2 - We generated solution-processed thin film transistor (TFTs) using gallium tin zinc oxide (GTZO, Ga-Sn-Zn-O) layers as the channel that exhibit improved bias-stress stability during device operation under ambient conditions. The cause of the bias-stress stability was investigated through comparisons with zinc tin oxide (ZTO, Zn-Sn-O)-based TFTs, which suffer red from bias stress instability. Based on in-depth analysis of the electrical characteristics and chemical structure of both GTZO and ZTO layers, it was discovered that the GTZO layers had a significantly lower oxygen vacancy concentration than did the ZTO layer, which influenced the electrical performance of the GTZO transistors as well as their bias-stress stability. When 5 mol% gallium was added, a bias stress-stable transistor was obtained, exhibiting typical semiconductor behavior with a field-effect mobility of 1.2 cm2 V- 1 s - 1, on/off ratio of 106, off-current of 1 × 10 - 10 A, and threshold voltage of 19.6 V. Further doping of Ga deteriorated the device performance, which was found to be associated with decreased carrier concentration and segregation of an insulating secondary phase.

AB - We generated solution-processed thin film transistor (TFTs) using gallium tin zinc oxide (GTZO, Ga-Sn-Zn-O) layers as the channel that exhibit improved bias-stress stability during device operation under ambient conditions. The cause of the bias-stress stability was investigated through comparisons with zinc tin oxide (ZTO, Zn-Sn-O)-based TFTs, which suffer red from bias stress instability. Based on in-depth analysis of the electrical characteristics and chemical structure of both GTZO and ZTO layers, it was discovered that the GTZO layers had a significantly lower oxygen vacancy concentration than did the ZTO layer, which influenced the electrical performance of the GTZO transistors as well as their bias-stress stability. When 5 mol% gallium was added, a bias stress-stable transistor was obtained, exhibiting typical semiconductor behavior with a field-effect mobility of 1.2 cm2 V- 1 s - 1, on/off ratio of 106, off-current of 1 × 10 - 10 A, and threshold voltage of 19.6 V. Further doping of Ga deteriorated the device performance, which was found to be associated with decreased carrier concentration and segregation of an insulating secondary phase.

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Effect of gallium content on bias stress stability of solution-deposited Ga-Sn-Zn-O semiconductor transistors

Abstract

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