Effect of fluorine incorporation on silicon dioxide prepared by high density plasma chemical vapor deposition with SiH4/O 2/NF3 chemistry

Jae Hong Kim; Chai O. Chung; Dongsun Sheen; Yong Sun Sohn; Hyun Chul Sohn; Jin Woong Kim; Sung Wook Park

doi:10.1063/1.1767979

Effect of fluorine incorporation on silicon dioxide prepared by high density plasma chemical vapor deposition with SiH₄/O ₂/NF₃ chemistry

Jae Hong Kim, Chai O. Chung, Dongsun Sheen, Yong Sun Sohn, Hyun Chul Sohn, Jin Woong Kim, Sung Wook Park

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

15 Citations (Scopus)

Abstract

The effect fluorine incorporation on properties of silicon dioxide thin films was studied. Fluorine was incorporated into silicon dioxide films during high density plasma chemical vapor deposition (CVD) with SiGH₄/O ₂/NF₃/He gas mixture. The refractive index was measured by using ellipsometry decreased with increasing NF₃/O₂ flow ratio for both as-deposited and annealed films. It was found from the secondary ion mass spectroscopy and x-ray photoelectron spectroscopy confirmed the behavior of fluorine diffusion and the binding energy for each species in the films.

Original language	English
Pages (from-to)	1435-1442
Number of pages	8
Journal	Journal of Applied Physics
Volume	96
Issue number	3
DOIs	https://doi.org/10.1063/1.1767979
Publication status	Published - 2004 Aug 1

All Science Journal Classification (ASJC) codes

Physics and Astronomy(all)

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title = "Effect of fluorine incorporation on silicon dioxide prepared by high density plasma chemical vapor deposition with SiH4/O 2/NF3 chemistry",

abstract = "The effect fluorine incorporation on properties of silicon dioxide thin films was studied. Fluorine was incorporated into silicon dioxide films during high density plasma chemical vapor deposition (CVD) with SiGH4/O 2/NF3/He gas mixture. The refractive index was measured by using ellipsometry decreased with increasing NF3/O2 flow ratio for both as-deposited and annealed films. It was found from the secondary ion mass spectroscopy and x-ray photoelectron spectroscopy confirmed the behavior of fluorine diffusion and the binding energy for each species in the films.",

author = "Kim, {Jae Hong} and Chung, {Chai O.} and Dongsun Sheen and Sohn, {Yong Sun} and Sohn, {Hyun Chul} and Kim, {Jin Woong} and Park, {Sung Wook}",

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AU - Kim, Jae Hong

AU - Chung, Chai O.

AU - Sheen, Dongsun

AU - Sohn, Yong Sun

AU - Sohn, Hyun Chul

AU - Kim, Jin Woong

AU - Park, Sung Wook

PY - 2004/8/1

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N2 - The effect fluorine incorporation on properties of silicon dioxide thin films was studied. Fluorine was incorporated into silicon dioxide films during high density plasma chemical vapor deposition (CVD) with SiGH4/O 2/NF3/He gas mixture. The refractive index was measured by using ellipsometry decreased with increasing NF3/O2 flow ratio for both as-deposited and annealed films. It was found from the secondary ion mass spectroscopy and x-ray photoelectron spectroscopy confirmed the behavior of fluorine diffusion and the binding energy for each species in the films.

AB - The effect fluorine incorporation on properties of silicon dioxide thin films was studied. Fluorine was incorporated into silicon dioxide films during high density plasma chemical vapor deposition (CVD) with SiGH4/O 2/NF3/He gas mixture. The refractive index was measured by using ellipsometry decreased with increasing NF3/O2 flow ratio for both as-deposited and annealed films. It was found from the secondary ion mass spectroscopy and x-ray photoelectron spectroscopy confirmed the behavior of fluorine diffusion and the binding energy for each species in the films.

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Effect of fluorine incorporation on silicon dioxide prepared by high density plasma chemical vapor deposition with SiH₄/O ₂/NF₃ chemistry

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