The effect fluorine incorporation on properties of silicon dioxide thin films was studied. Fluorine was incorporated into silicon dioxide films during high density plasma chemical vapor deposition (CVD) with SiGH4/O 2/NF3/He gas mixture. The refractive index was measured by using ellipsometry decreased with increasing NF3/O2 flow ratio for both as-deposited and annealed films. It was found from the secondary ion mass spectroscopy and x-ray photoelectron spectroscopy confirmed the behavior of fluorine diffusion and the binding energy for each species in the films.
|Number of pages||8|
|Journal||Journal of Applied Physics|
|Publication status||Published - 2004 Aug 1|
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)