TY - JOUR
T1 - Effect of Diluent Gases on Growth Behavior and Characteristics of Chemically Vapor Deposited Silicon Carbide Films
AU - Kim, Han Su
AU - Choi, Doo Jin
PY - 1999/2
Y1 - 1999/2
N2 - SiC films were chemically vapor deposited onto graphite substrates using methyltrichlorosilane (MTS, CH3SiCl3) as a source and argon or hydrogen as diluent gases to investigate the effect of each diluent gas on growth behavior and characteristics. Each diluent gas used had a relative difference in deposition rate within a certain temperature region. Such growth characteristics of the SiC films as preferred orientation, microstructure, and chemical composition varied remarkably with the diluent gas used. Microhardness and surface roughness were compared for SiC films prepared using the different diluent gases.
AB - SiC films were chemically vapor deposited onto graphite substrates using methyltrichlorosilane (MTS, CH3SiCl3) as a source and argon or hydrogen as diluent gases to investigate the effect of each diluent gas on growth behavior and characteristics. Each diluent gas used had a relative difference in deposition rate within a certain temperature region. Such growth characteristics of the SiC films as preferred orientation, microstructure, and chemical composition varied remarkably with the diluent gas used. Microhardness and surface roughness were compared for SiC films prepared using the different diluent gases.
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U2 - 10.1111/j.1551-2916.1999.tb20066.x
DO - 10.1111/j.1551-2916.1999.tb20066.x
M3 - Article
AN - SCOPUS:0033078844
SN - 0002-7820
VL - 82
SP - 331
EP - 337
JO - Journal of the American Ceramic Society
JF - Journal of the American Ceramic Society
IS - 2
ER -