Effect of deposition conditions of poly Si1-xGex films and Ge atoms on the electrical properties of poly Si1-xGe x(x=0,0.6)/HfO2 gate stack

Sung Kwan Kang, Suheun Nam, Byoung Gi Min, Seok Woo Nam, Dae Hong Ko, Mann Ho Cho

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

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