Abstract
Diamond films are grown by hot filament chemical vapor deposition with different deposition conditions and implanted with boron and phosphorus ions. Field emission property of diamond films are examined in a ultra high vacuum system. Diamond film with high methane flow ratio exhibits low emission current due to high electron affinity surface. Thick diamond film has poor emission property and it can be attributed to the limit of electron transport path. From the Raman spectra, the boron implanted sample still has a weakened diamond peak with high non-diamond component while the phosphorus implanted sample loses diamond structure. On the other hand, their AES spectra at surface do not exhibit an obvious diamond shoulder, indicating the surface damaged by high dose implantation.
| Original language | English |
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| Pages | 465-469 |
| Number of pages | 5 |
| Publication status | Published - 1997 |
| Event | Proceedings of the 1997 10th International Vacuum Microelectronics Conference, IVMC'97 - Kyongju, Korea Duration: 1997 Aug 17 → 1997 Aug 21 |
Other
| Other | Proceedings of the 1997 10th International Vacuum Microelectronics Conference, IVMC'97 |
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| City | Kyongju, Korea |
| Period | 97/8/17 → 97/8/21 |
All Science Journal Classification (ASJC) codes
- Surfaces and Interfaces