Effect of crystallinity on the resistive switching behavior of HfAlOx films

In Su Mok; Jonggi Kim; Kyumin Lee; Youngjae Kim; Hyunchul Sohn; Hyoungsub Kim

doi:10.3938/jkps.64.419

Effect of crystallinity on the resistive switching behavior of HfAlO_x films

In Su Mok, Jonggi Kim, Kyumin Lee, Youngjae Kim, Hyunchul Sohn, Hyoungsub Kim

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

In this work, we investigated the effect of the Al₂O₃ cyclic ratio and the annealing temperature on the crystallinity and the resistive switching behavior of HfO₂ and HfAlO_x cells. The microstructures of the HfO₂ and the HfAlO_x films were measured by using X-ray diffraction and transmission electron microscopy in order to observe the dependencies of the electro-forming and resistive switching behaviors on the crystallinity. The formation of grain boundaries in connection with a microstructural change from an amorphous to a poly-crystalline phase is expected to be responsible for the leakage current and for the formation of conductive path formation.

Original language	English
Pages (from-to)	419-423
Number of pages	5
Journal	Journal of the Korean Physical Society
Volume	64
Issue number	3
DOIs	https://doi.org/10.3938/jkps.64.419
Publication status	Published - 2014 Feb

Bibliographical note

Funding Information:
This work was supported by the R&D Program of the Ministry of Knowledge Economy the Industry– University Cooperation Project of Samsung Electronics, and the second stage of the Brain Korea 21 project (BK21).

All Science Journal Classification (ASJC) codes

Physics and Astronomy(all)

Access to Document

10.3938/jkps.64.419

Cite this

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title = "Effect of crystallinity on the resistive switching behavior of HfAlOx films",

abstract = "In this work, we investigated the effect of the Al2O3 cyclic ratio and the annealing temperature on the crystallinity and the resistive switching behavior of HfO2 and HfAlOx cells. The microstructures of the HfO2 and the HfAlOx films were measured by using X-ray diffraction and transmission electron microscopy in order to observe the dependencies of the electro-forming and resistive switching behaviors on the crystallinity. The formation of grain boundaries in connection with a microstructural change from an amorphous to a poly-crystalline phase is expected to be responsible for the leakage current and for the formation of conductive path formation.",

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AU - Mok, In Su

AU - Kim, Jonggi

AU - Lee, Kyumin

AU - Kim, Youngjae

AU - Sohn, Hyunchul

AU - Kim, Hyoungsub

N1 - Funding Information: This work was supported by the R&D Program of the Ministry of Knowledge Economy the Industry– University Cooperation Project of Samsung Electronics, and the second stage of the Brain Korea 21 project (BK21).

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AB - In this work, we investigated the effect of the Al2O3 cyclic ratio and the annealing temperature on the crystallinity and the resistive switching behavior of HfO2 and HfAlOx cells. The microstructures of the HfO2 and the HfAlOx films were measured by using X-ray diffraction and transmission electron microscopy in order to observe the dependencies of the electro-forming and resistive switching behaviors on the crystallinity. The formation of grain boundaries in connection with a microstructural change from an amorphous to a poly-crystalline phase is expected to be responsible for the leakage current and for the formation of conductive path formation.

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