Effect of chemical bonding states in TaOx base layers on rectifying bipolar resistive switching characteristics

Jonggi Kim; In Su Mok; Youngjae Kim; Kyumin Lee; Dae Hong Ko; Hyunchul Sohn

doi:10.1116/1.4806766

Effect of chemical bonding states in TaO_x base layers on rectifying bipolar resistive switching characteristics

Jonggi Kim, In Su Mok, Youngjae Kim, Kyumin Lee, Dae Hong Ko, Hyunchul Sohn

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

In this study, the authors investigated the rectifying bipolar resistive switching characteristics of Pt/HfO₂/TaO_x/Pt heterostacks with respect to the chemical bonding states of the TaO_x base layer and the physical properties of the insulator layer. The authors demonstrated that the migration of oxygen ions at the interface between the HfO₂ insulator layer and the TaO_x base layer produced the rectifying bipolar resistive switching, and the switching current could be controlled via the oxygen concentration in the TaO_x layer. They also observed that the current at the high-resistance state decreased with increasing thickness of the HfO₂ insulator layer. Rectifying bipolar resistive switching behavior was additionally demonstrated by using an Al₂O₃ layer as an insulator instead of HfO₂.

Original language	English
Article number	032206
Journal	Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics
Volume	31
Issue number	3
DOIs	https://doi.org/10.1116/1.4806766
Publication status	Published - 2013 May

Bibliographical note

Funding Information:
This work was supported by the “R&D Program of the Ministry of Knowledge Economy,” an industry–university cooperation project of SK Hynix Semiconductor Inc., and the second stage of the Brain Korea 21 Project (BK21).

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Instrumentation
Process Chemistry and Technology
Surfaces, Coatings and Films
Electrical and Electronic Engineering
Materials Chemistry

Access to Document

10.1116/1.4806766

Cite this

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title = "Effect of chemical bonding states in TaOx base layers on rectifying bipolar resistive switching characteristics",

abstract = "In this study, the authors investigated the rectifying bipolar resistive switching characteristics of Pt/HfO2/TaOx/Pt heterostacks with respect to the chemical bonding states of the TaOx base layer and the physical properties of the insulator layer. The authors demonstrated that the migration of oxygen ions at the interface between the HfO2 insulator layer and the TaOx base layer produced the rectifying bipolar resistive switching, and the switching current could be controlled via the oxygen concentration in the TaOx layer. They also observed that the current at the high-resistance state decreased with increasing thickness of the HfO2 insulator layer. Rectifying bipolar resistive switching behavior was additionally demonstrated by using an Al2O3 layer as an insulator instead of HfO2.",

author = "Jonggi Kim and Mok, {In Su} and Youngjae Kim and Kyumin Lee and Ko, {Dae Hong} and Hyunchul Sohn",

note = "Funding Information: This work was supported by the “R&D Program of the Ministry of Knowledge Economy,” an industry–university cooperation project of SK Hynix Semiconductor Inc., and the second stage of the Brain Korea 21 Project (BK21).",

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T1 - Effect of chemical bonding states in TaOx base layers on rectifying bipolar resistive switching characteristics

AU - Kim, Jonggi

AU - Mok, In Su

AU - Kim, Youngjae

AU - Lee, Kyumin

AU - Ko, Dae Hong

AU - Sohn, Hyunchul

N1 - Funding Information: This work was supported by the “R&D Program of the Ministry of Knowledge Economy,” an industry–university cooperation project of SK Hynix Semiconductor Inc., and the second stage of the Brain Korea 21 Project (BK21).

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N2 - In this study, the authors investigated the rectifying bipolar resistive switching characteristics of Pt/HfO2/TaOx/Pt heterostacks with respect to the chemical bonding states of the TaOx base layer and the physical properties of the insulator layer. The authors demonstrated that the migration of oxygen ions at the interface between the HfO2 insulator layer and the TaOx base layer produced the rectifying bipolar resistive switching, and the switching current could be controlled via the oxygen concentration in the TaOx layer. They also observed that the current at the high-resistance state decreased with increasing thickness of the HfO2 insulator layer. Rectifying bipolar resistive switching behavior was additionally demonstrated by using an Al2O3 layer as an insulator instead of HfO2.

AB - In this study, the authors investigated the rectifying bipolar resistive switching characteristics of Pt/HfO2/TaOx/Pt heterostacks with respect to the chemical bonding states of the TaOx base layer and the physical properties of the insulator layer. The authors demonstrated that the migration of oxygen ions at the interface between the HfO2 insulator layer and the TaOx base layer produced the rectifying bipolar resistive switching, and the switching current could be controlled via the oxygen concentration in the TaOx layer. They also observed that the current at the high-resistance state decreased with increasing thickness of the HfO2 insulator layer. Rectifying bipolar resistive switching behavior was additionally demonstrated by using an Al2O3 layer as an insulator instead of HfO2.

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