Effect of carrier concentration on optical bandgap shift in ZnO:Ga thin films

Chang Eun Kim, Pyung Moon, Sungyeon Kim, Jae Min Myoung, Hyeon Woo Jang, Jungsik Bang, Ilgu Yun

Research output: Contribution to journalArticlepeer-review

147 Citations (Scopus)


The Ga-doped ZnO thin films were deposited on glass substrate by sputtering and annealed at 350 °C in hydrogen atmosphere for 1 h. The optical bandgap of thin films showed the lower blueshift than the theoretical value of the Burstein-Moss (BM) effect. The shift of bandgap was dependent on the carrier concentration and acquired by combining the nonparabolic BM effect and bandgap narrowing (BGN). The modified BM effect equation was proposed to substitute the nonparabolic BM effect and BGN. The exponent in the modified BM equation was affected by carrier concentration and it was decreased with carrier concentration.

Original languageEnglish
Pages (from-to)6304-6307
Number of pages4
JournalThin Solid Films
Issue number22
Publication statusPublished - 2010 Sept 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry


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