Effect of boron-implantation on the strain-relaxation of pseudomorphic metastable Ge0.06Si0.94 alloy layers

M. S. Oh; S. Im; H. B. Kim; J. H. Song

doi:10.1109/IMNC.1998.730044

Effect of boron-implantation on the strain-relaxation of pseudomorphic metastable Ge_0.06Si_0.94 alloy layers

M. S. Oh, S. Im, H. B. Kim, J. H. Song

Department of Physics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Original language	English
Title of host publication	Digest of Papers - Microprocesses and Nanotechnology 1998
Subtitle of host publication	1998 International Microprocesses and Nanotechnology Conference
Editors	Hyung Joon Yoo, Shinji Okazaki, Jinho Ahn, Ohyun Kim, Masanori Komuro
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	202-203
Number of pages	2
ISBN (Electronic)	4930813832, 9784930813831
DOIs	https://doi.org/10.1109/IMNC.1998.730044
Publication status	Published - 1998
Event	1998 International Microprocesses and Nanotechnology Conference, MNC 1998 - Kyoungju, Korea, Republic of Duration: 1998 Jul 13 → 1998 Jul 16

Publication series

Name	Digest of Papers - Microprocesses and Nanotechnology 1998: 1998 International Microprocesses and Nanotechnology Conference
Volume	1998-July

Conference

Conference	1998 International Microprocesses and Nanotechnology Conference, MNC 1998
Country/Territory	Korea, Republic of
City	Kyoungju
Period	98/7/13 → 98/7/16

All Science Journal Classification (ASJC) codes

Materials Science(all)
Nuclear and High Energy Physics
Computer Science Applications

Access to Document

10.1109/IMNC.1998.730044

Cite this

Oh, M. S., Im, S., Kim, H. B., & Song, J. H. (1998). Effect of boron-implantation on the strain-relaxation of pseudomorphic metastable Ge_0.06Si_0.94 alloy layers. In H. J. Yoo, S. Okazaki, J. Ahn, O. Kim, & M. Komuro (Eds.), Digest of Papers - Microprocesses and Nanotechnology 1998: 1998 International Microprocesses and Nanotechnology Conference (pp. 202-203). [730044] (Digest of Papers - Microprocesses and Nanotechnology 1998: 1998 International Microprocesses and Nanotechnology Conference; Vol. 1998-July). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IMNC.1998.730044

Oh, M. S. ; Im, S. ; Kim, H. B. et al. / Effect of boron-implantation on the strain-relaxation of pseudomorphic metastable Ge_0.06Si_0.94 alloy layers. Digest of Papers - Microprocesses and Nanotechnology 1998: 1998 International Microprocesses and Nanotechnology Conference. editor / Hyung Joon Yoo ; Shinji Okazaki ; Jinho Ahn ; Ohyun Kim ; Masanori Komuro. Institute of Electrical and Electronics Engineers Inc., 1998. pp. 202-203 (Digest of Papers - Microprocesses and Nanotechnology 1998: 1998 International Microprocesses and Nanotechnology Conference).

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title = "Effect of boron-implantation on the strain-relaxation of pseudomorphic metastable Ge0.06Si0.94 alloy layers",

author = "Oh, {M. S.} and S. Im and Kim, {H. B.} and Song, {J. H.}",

year = "1998",

doi = "10.1109/IMNC.1998.730044",

language = "English",

series = "Digest of Papers - Microprocesses and Nanotechnology 1998: 1998 International Microprocesses and Nanotechnology Conference",

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note = "1998 International Microprocesses and Nanotechnology Conference, MNC 1998 ; Conference date: 13-07-1998 Through 16-07-1998",

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Oh, MS, Im, S, Kim, HB & Song, JH 1998, Effect of boron-implantation on the strain-relaxation of pseudomorphic metastable Ge_0.06Si_0.94 alloy layers. in HJ Yoo, S Okazaki, J Ahn, O Kim & M Komuro (eds), Digest of Papers - Microprocesses and Nanotechnology 1998: 1998 International Microprocesses and Nanotechnology Conference., 730044, Digest of Papers - Microprocesses and Nanotechnology 1998: 1998 International Microprocesses and Nanotechnology Conference, vol. 1998-July, Institute of Electrical and Electronics Engineers Inc., pp. 202-203, 1998 International Microprocesses and Nanotechnology Conference, MNC 1998, Kyoungju, Korea, Republic of, 98/7/13. https://doi.org/10.1109/IMNC.1998.730044

Effect of boron-implantation on the strain-relaxation of pseudomorphic metastable Ge_0.06Si_0.94 alloy layers. / Oh, M. S.; Im, S.; Kim, H. B. et al.
Digest of Papers - Microprocesses and Nanotechnology 1998: 1998 International Microprocesses and Nanotechnology Conference. ed. / Hyung Joon Yoo; Shinji Okazaki; Jinho Ahn; Ohyun Kim; Masanori Komuro. Institute of Electrical and Electronics Engineers Inc., 1998. p. 202-203 730044 (Digest of Papers - Microprocesses and Nanotechnology 1998: 1998 International Microprocesses and Nanotechnology Conference; Vol. 1998-July).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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T1 - Effect of boron-implantation on the strain-relaxation of pseudomorphic metastable Ge0.06Si0.94 alloy layers

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M3 - Conference contribution

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T3 - Digest of Papers - Microprocesses and Nanotechnology 1998: 1998 International Microprocesses and Nanotechnology Conference

SP - 202

EP - 203

BT - Digest of Papers - Microprocesses and Nanotechnology 1998

A2 - Yoo, Hyung Joon

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A2 - Kim, Ohyun

A2 - Komuro, Masanori

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 1998 International Microprocesses and Nanotechnology Conference, MNC 1998

Y2 - 13 July 1998 through 16 July 1998

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Oh MS, Im S, Kim HB, Song JH. Effect of boron-implantation on the strain-relaxation of pseudomorphic metastable Ge_0.06Si_0.94 alloy layers. In Yoo HJ, Okazaki S, Ahn J, Kim O, Komuro M, editors, Digest of Papers - Microprocesses and Nanotechnology 1998: 1998 International Microprocesses and Nanotechnology Conference. Institute of Electrical and Electronics Engineers Inc. 1998. p. 202-203. 730044. (Digest of Papers - Microprocesses and Nanotechnology 1998: 1998 International Microprocesses and Nanotechnology Conference). doi: 10.1109/IMNC.1998.730044