Effect of Al2O3 Deposition on Performance of Top-Gated Monolayer MoS2-Based Field Effect Transistor

Jeong Gyu Song; Seok Jin Kim; Whang Je Woo; Youngjun Kim; Il Kwon Oh; Gyeong Hee Ryu; Zonghoon Lee; Jun Hyung Lim; Jusang Park; Hyungjun Kim

doi:10.1021/acsami.6b07271

Effect of Al₂O₃ Deposition on Performance of Top-Gated Monolayer MoS₂-Based Field Effect Transistor

Jeong Gyu Song, Seok Jin Kim, Whang Je Woo, Youngjun Kim, Il Kwon Oh, Gyeong Hee Ryu, Zonghoon Lee, Jun Hyung Lim, Jusang Park, Hyungjun Kim

Department of Electrical and Electronic Engineering

Research output: Contribution to journal › Article › peer-review

36 Citations (Scopus)

Abstract

Deposition of high-k dielectrics on two-dimensional MoS₂ is an important process for successful application of the transition-metal dichalcogenides in electronic devices. Here, we show the effect of H₂O reactant exposure on monolayer (1L) MoS₂ during atomic layer deposition (ALD) of Al₂O₃. The results showed that the ALD-Al₂O₃ caused degradation of the performance of 1L MoS₂ field effect transistors (FETs) owing to the formation of Mo-O bonding and trapping of H₂O molecules at the Al₂O₃/MoS₂ interface. Furthermore, we demonstrated that reduced duration of exposure to H₂O reactant and postdeposition annealing were essential to the enhancement of the performance of top-gated 1L MoS₂ FETs. The mobility and on/off current ratios were increased by factors of approximately 40 and 10³, respectively, with reduced duration of exposure to H₂O reactant and with postdeposition annealing.

Original language	English
Pages (from-to)	28130-28135
Number of pages	6
Journal	ACS Applied Materials and Interfaces
Volume	8
Issue number	41
DOIs	https://doi.org/10.1021/acsami.6b07271
Publication status	Published - 2016 Oct 19

Bibliographical note

Funding Information:
This work was supported by Korea Evaluation Institute of Industrial Technology (KEIT) funded by the Ministry of Trade, Industry and Energy (MOTIE) (Project No. 10050296, Large scale (Over 8) synthesis and evaluation technology of 2- dimensional chalcogenides for next generation electronic devices). This work was supported by the Center for Integrated Smart Sensors funded by the Ministry of Science, ICT and Future Planning as Global Frontier Project (CISS-2011- 0031848). This work was supported by the National Research Foundation of Korea (NRF) grant funded by the Korea government (MSIP) (No. NRF-2014R1A2A1A11052588). This work was supported by Samsung Display Co., Ltd.

Publisher Copyright:
© 2016 American Chemical Society.

All Science Journal Classification (ASJC) codes

Materials Science(all)

Access to Document

10.1021/acsami.6b07271

Cite this

@article{7bebb0e7215a4b39902597c5b92b3c54,

title = "Effect of Al2O3 Deposition on Performance of Top-Gated Monolayer MoS2-Based Field Effect Transistor",

abstract = "Deposition of high-k dielectrics on two-dimensional MoS2 is an important process for successful application of the transition-metal dichalcogenides in electronic devices. Here, we show the effect of H2O reactant exposure on monolayer (1L) MoS2 during atomic layer deposition (ALD) of Al2O3. The results showed that the ALD-Al2O3 caused degradation of the performance of 1L MoS2 field effect transistors (FETs) owing to the formation of Mo-O bonding and trapping of H2O molecules at the Al2O3/MoS2 interface. Furthermore, we demonstrated that reduced duration of exposure to H2O reactant and postdeposition annealing were essential to the enhancement of the performance of top-gated 1L MoS2 FETs. The mobility and on/off current ratios were increased by factors of approximately 40 and 103, respectively, with reduced duration of exposure to H2O reactant and with postdeposition annealing.",

author = "Song, {Jeong Gyu} and Kim, {Seok Jin} and Woo, {Whang Je} and Youngjun Kim and Oh, {Il Kwon} and Ryu, {Gyeong Hee} and Zonghoon Lee and Lim, {Jun Hyung} and Jusang Park and Hyungjun Kim",

note = "Funding Information: This work was supported by Korea Evaluation Institute of Industrial Technology (KEIT) funded by the Ministry of Trade, Industry and Energy (MOTIE) (Project No. 10050296, Large scale (Over 8) synthesis and evaluation technology of 2- dimensional chalcogenides for next generation electronic devices). This work was supported by the Center for Integrated Smart Sensors funded by the Ministry of Science, ICT and Future Planning as Global Frontier Project (CISS-2011- 0031848). This work was supported by the National Research Foundation of Korea (NRF) grant funded by the Korea government (MSIP) (No. NRF-2014R1A2A1A11052588). This work was supported by Samsung Display Co., Ltd. Publisher Copyright: {\textcopyright} 2016 American Chemical Society.",

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AU - Song, Jeong Gyu

AU - Kim, Seok Jin

AU - Woo, Whang Je

AU - Kim, Youngjun

AU - Oh, Il Kwon

AU - Ryu, Gyeong Hee

AU - Lee, Zonghoon

AU - Lim, Jun Hyung

AU - Park, Jusang

AU - Kim, Hyungjun

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PY - 2016/10/19

Y1 - 2016/10/19

N2 - Deposition of high-k dielectrics on two-dimensional MoS2 is an important process for successful application of the transition-metal dichalcogenides in electronic devices. Here, we show the effect of H2O reactant exposure on monolayer (1L) MoS2 during atomic layer deposition (ALD) of Al2O3. The results showed that the ALD-Al2O3 caused degradation of the performance of 1L MoS2 field effect transistors (FETs) owing to the formation of Mo-O bonding and trapping of H2O molecules at the Al2O3/MoS2 interface. Furthermore, we demonstrated that reduced duration of exposure to H2O reactant and postdeposition annealing were essential to the enhancement of the performance of top-gated 1L MoS2 FETs. The mobility and on/off current ratios were increased by factors of approximately 40 and 103, respectively, with reduced duration of exposure to H2O reactant and with postdeposition annealing.

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