Effect of aliovalent impurities on the resistance switching characteristics of sputtered hafnium oxide films

Kyumin Lee; Youngjae Kim; Heedo Na; Hyunchul Sohn

doi:10.1116/1.4917495

Effect of aliovalent impurities on the resistance switching characteristics of sputtered hafnium oxide films

Kyumin Lee, Youngjae Kim, Heedo Na, Hyunchul Sohn

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

In this work, the effects of various aliovalent impurities on the resistance switching characteristics of hafnium oxide (HfO₂) films were investigated in conjunction with analyses of chemical bonding states and film microstructure. HfO₂ films were cosputtered with magnesium, aluminum, and niobium by reactive DC magnetron sputtering. Doping with aliovalent elements caused the nonlattice oxygen concentration of HfO₂ to increase and grain size to decrease. Also, post-thermal annealing induced a further increase of the concentration of nonlattice oxygen in the doped HfO₂. Impurity doping improved the uniformities of the resistances of the low and high resistance states for cycled SET/RESET operations of titanium nitride/doped HfO₂/platinum stacks, particularly for the magnesium-doped HfO₂ films.

Original language	English
Article number	032204
Journal	Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics
Volume	33
Issue number	3
DOIs	https://doi.org/10.1116/1.4917495
Publication status	Published - 2015 May 1

Bibliographical note

Publisher Copyright:
© 2015 American Vacuum Society.

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Instrumentation
Process Chemistry and Technology
Surfaces, Coatings and Films
Electrical and Electronic Engineering
Materials Chemistry

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abstract = "In this work, the effects of various aliovalent impurities on the resistance switching characteristics of hafnium oxide (HfO2) films were investigated in conjunction with analyses of chemical bonding states and film microstructure. HfO2 films were cosputtered with magnesium, aluminum, and niobium by reactive DC magnetron sputtering. Doping with aliovalent elements caused the nonlattice oxygen concentration of HfO2 to increase and grain size to decrease. Also, post-thermal annealing induced a further increase of the concentration of nonlattice oxygen in the doped HfO2. Impurity doping improved the uniformities of the resistances of the low and high resistance states for cycled SET/RESET operations of titanium nitride/doped HfO2/platinum stacks, particularly for the magnesium-doped HfO2 films.",

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AU - Sohn, Hyunchul

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Effect of aliovalent impurities on the resistance switching characteristics of sputtered hafnium oxide films

Abstract

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