Effect of Al doping on resistive switching behavior of NiOx films for nonvolatile memory application

Jonggi Kim, Heedo Na, Jinho Oh, Dae Hong Ko, Hyunchul Sohn

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)


In this work, the authors investigated the effect of Al doping on the resistance switching characteristics of sputtered NiOx films. Pt/NiOx/Pt metal-insulator-metal (MIM) stacks were fabricated by reactive dc magnetron sputtering with various Al contents in NiOx films and the resistance switching behavior of the MIM stack was characterized in conjunction with physical property, such as chemical bonding of NiO x. Al doping into NiOx films improved the endurance of SET/RESET operations, the distribution of VSET, and the memory window compared to the undoped NiOx films. X-ray photoemission spectroscopy showed that the Al doping caused the density of metallic nickel (Ni0) to be increased with the reduction of Ni3+ concentration. It was considered that the increase of metallic nickel (Ni0) in Al-doped NiOx films enhanced the repeated formation and rupture of conductive filaments during resistive switching operation, resulting in the enhanced endurance and the narrowed VSET distribution.

Original languageEnglish
Pages (from-to)1143-1147
Number of pages5
JournalJournal of Vacuum Science and Technology B
Issue number6
Publication statusPublished - 2010 Nov

Bibliographical note

Funding Information:
This work was supported by the industry-university cooperation project of Samsung Electronics, “National Program for 0.1-Terabit Nonvolatile Memory Device Development,” and the second stage of the Brain Korea 21 project (BK21).

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Instrumentation
  • Process Chemistry and Technology
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering
  • Materials Chemistry


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