Effect of Al doping on resistive switching behavior of NiOx films for nonvolatile memory application

Jonggi Kim; Heedo Na; Jinho Oh; Dae Hong Ko; Hyunchul Sohn

doi:10.1116/1.3501109

Effect of Al doping on resistive switching behavior of NiO_x films for nonvolatile memory application

Jonggi Kim, Heedo Na, Jinho Oh, Dae Hong Ko, Hyunchul Sohn

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

In this work, the authors investigated the effect of Al doping on the resistance switching characteristics of sputtered NiO_x films. Pt/NiO_x/Pt metal-insulator-metal (MIM) stacks were fabricated by reactive dc magnetron sputtering with various Al contents in NiO_x films and the resistance switching behavior of the MIM stack was characterized in conjunction with physical property, such as chemical bonding of NiO _x. Al doping into NiO_x films improved the endurance of SET/RESET operations, the distribution of VSET, and the memory window compared to the undoped NiO_x films. X-ray photoemission spectroscopy showed that the Al doping caused the density of metallic nickel (Ni₀) to be increased with the reduction of Ni3+ concentration. It was considered that the increase of metallic nickel (Ni₀) in Al-doped NiO_x films enhanced the repeated formation and rupture of conductive filaments during resistive switching operation, resulting in the enhanced endurance and the narrowed VSET distribution.

Original language	English
Pages (from-to)	1143-1147
Number of pages	5
Journal	Journal of Vacuum Science and Technology B
Volume	28
Issue number	6
DOIs	https://doi.org/10.1116/1.3501109
Publication status	Published - 2010 Nov

Bibliographical note

Funding Information:
This work was supported by the industry-university cooperation project of Samsung Electronics, “National Program for 0.1-Terabit Nonvolatile Memory Device Development,” and the second stage of the Brain Korea 21 project (BK21).

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Instrumentation
Process Chemistry and Technology
Surfaces, Coatings and Films
Electrical and Electronic Engineering
Materials Chemistry

Access to Document

10.1116/1.3501109

Cite this

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title = "Effect of Al doping on resistive switching behavior of NiOx films for nonvolatile memory application",

abstract = "In this work, the authors investigated the effect of Al doping on the resistance switching characteristics of sputtered NiOx films. Pt/NiOx/Pt metal-insulator-metal (MIM) stacks were fabricated by reactive dc magnetron sputtering with various Al contents in NiOx films and the resistance switching behavior of the MIM stack was characterized in conjunction with physical property, such as chemical bonding of NiO x. Al doping into NiOx films improved the endurance of SET/RESET operations, the distribution of VSET, and the memory window compared to the undoped NiOx films. X-ray photoemission spectroscopy showed that the Al doping caused the density of metallic nickel (Ni0) to be increased with the reduction of Ni3+ concentration. It was considered that the increase of metallic nickel (Ni0) in Al-doped NiOx films enhanced the repeated formation and rupture of conductive filaments during resistive switching operation, resulting in the enhanced endurance and the narrowed VSET distribution.",

author = "Jonggi Kim and Heedo Na and Jinho Oh and Ko, {Dae Hong} and Hyunchul Sohn",

note = "Funding Information: This work was supported by the industry-university cooperation project of Samsung Electronics, “National Program for 0.1-Terabit Nonvolatile Memory Device Development,” and the second stage of the Brain Korea 21 project (BK21). ",

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AU - Na, Heedo

AU - Oh, Jinho

AU - Ko, Dae Hong

AU - Sohn, Hyunchul

N1 - Funding Information: This work was supported by the industry-university cooperation project of Samsung Electronics, “National Program for 0.1-Terabit Nonvolatile Memory Device Development,” and the second stage of the Brain Korea 21 project (BK21).

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N2 - In this work, the authors investigated the effect of Al doping on the resistance switching characteristics of sputtered NiOx films. Pt/NiOx/Pt metal-insulator-metal (MIM) stacks were fabricated by reactive dc magnetron sputtering with various Al contents in NiOx films and the resistance switching behavior of the MIM stack was characterized in conjunction with physical property, such as chemical bonding of NiO x. Al doping into NiOx films improved the endurance of SET/RESET operations, the distribution of VSET, and the memory window compared to the undoped NiOx films. X-ray photoemission spectroscopy showed that the Al doping caused the density of metallic nickel (Ni0) to be increased with the reduction of Ni3+ concentration. It was considered that the increase of metallic nickel (Ni0) in Al-doped NiOx films enhanced the repeated formation and rupture of conductive filaments during resistive switching operation, resulting in the enhanced endurance and the narrowed VSET distribution.

AB - In this work, the authors investigated the effect of Al doping on the resistance switching characteristics of sputtered NiOx films. Pt/NiOx/Pt metal-insulator-metal (MIM) stacks were fabricated by reactive dc magnetron sputtering with various Al contents in NiOx films and the resistance switching behavior of the MIM stack was characterized in conjunction with physical property, such as chemical bonding of NiO x. Al doping into NiOx films improved the endurance of SET/RESET operations, the distribution of VSET, and the memory window compared to the undoped NiOx films. X-ray photoemission spectroscopy showed that the Al doping caused the density of metallic nickel (Ni0) to be increased with the reduction of Ni3+ concentration. It was considered that the increase of metallic nickel (Ni0) in Al-doped NiOx films enhanced the repeated formation and rupture of conductive filaments during resistive switching operation, resulting in the enhanced endurance and the narrowed VSET distribution.

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