Effect of active layer thickness on the indium-gallium-zinc-oxide TFTs

Sun Jae Kim; Soo Yeon Lee; Jang Yeon Kwon; Woo Geun Lee; Kap Soo Yoon; Young Wook Lee; Min Koo Han

Effect of active layer thickness on the indium-gallium-zinc-oxide TFTs

Sun Jae Kim, Soo Yeon Lee, Jang Yeon Kwon, Woo Geun Lee, Kap Soo Yoon, Young Wook Lee, Min Koo Han

School of Integrated Technology

Research output: Contribution to conference › Paper › peer-review

Abstract

IGZO TFTs with various active-layer thick-nesses were investigated. V _TH of TFT with 400Å active-layer was -0.6V at R.T. and shifted 0.83 V at 230 °C while that of TFT with 700A° active-layer was -1.2V and shifted 2.3V. We have investigated the effect of active-layer thickness on the IGZO TFTs.

Original language	English
Pages	767-769
Number of pages	3
Publication status	Published - 2010
Event	17th International Display Workshops, IDW'10 - Fukuoka, Japan Duration: 2010 Dec 1 → 2010 Dec 3

Other

Other	17th International Display Workshops, IDW'10
Country/Territory	Japan
City	Fukuoka
Period	10/12/1 → 10/12/3

All Science Journal Classification (ASJC) codes

Computer Vision and Pattern Recognition
Human-Computer Interaction

Cite this

@conference{a0f06c07a0974165ad9891893753bdcc,

title = "Effect of active layer thickness on the indium-gallium-zinc-oxide TFTs",

abstract = "IGZO TFTs with various active-layer thick-nesses were investigated. V TH of TFT with 400{\AA} active-layer was -0.6V at R.T. and shifted 0.83 V at 230 °C while that of TFT with 700A° active-layer was -1.2V and shifted 2.3V. We have investigated the effect of active-layer thickness on the IGZO TFTs.",

author = "Kim, {Sun Jae} and Lee, {Soo Yeon} and Kwon, {Jang Yeon} and Lee, {Woo Geun} and Yoon, {Kap Soo} and Lee, {Young Wook} and Han, {Min Koo}",

year = "2010",

language = "English",

pages = "767--769",

note = "17th International Display Workshops, IDW'10 ; Conference date: 01-12-2010 Through 03-12-2010",

}

TY - CONF

T1 - Effect of active layer thickness on the indium-gallium-zinc-oxide TFTs

AU - Kim, Sun Jae

AU - Lee, Soo Yeon

AU - Kwon, Jang Yeon

AU - Lee, Woo Geun

AU - Yoon, Kap Soo

AU - Lee, Young Wook

AU - Han, Min Koo

PY - 2010

Y1 - 2010

N2 - IGZO TFTs with various active-layer thick-nesses were investigated. V TH of TFT with 400Å active-layer was -0.6V at R.T. and shifted 0.83 V at 230 °C while that of TFT with 700A° active-layer was -1.2V and shifted 2.3V. We have investigated the effect of active-layer thickness on the IGZO TFTs.

AB - IGZO TFTs with various active-layer thick-nesses were investigated. V TH of TFT with 400Å active-layer was -0.6V at R.T. and shifted 0.83 V at 230 °C while that of TFT with 700A° active-layer was -1.2V and shifted 2.3V. We have investigated the effect of active-layer thickness on the IGZO TFTs.

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UR - http://www.scopus.com/inward/citedby.url?scp=79956330918&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:79956330918

SP - 767

EP - 769

T2 - 17th International Display Workshops, IDW'10

Y2 - 1 December 2010 through 3 December 2010

ER -

Effect of active layer thickness on the indium-gallium-zinc-oxide TFTs

Abstract

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All Science Journal Classification (ASJC) codes

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