Abstract
Three-dimensional integrated systems that combine large-capacity dynamic random access memory (DRAM) with high-performance processors represent a promising solution to implementing high-performance computing. However, in such configurations stacked DRAM cells will inevitably be exposed to high temperatures generated by the processor, thereby necessitating DRAMs with high refresh rates driven by embedded temperature sensors. In this Letter, a thermally aware refresh-control method that accounts for abrupt changes in temperature and thermal distribution using low-power techniques such as dynamic voltage frequency scaling is proposed. Comparisons with previous systems via single- and eight-core simulations reveal that the proposed method improves efficiency with no additional overhead.
Original language | English |
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Pages (from-to) | 910-912 |
Number of pages | 3 |
Journal | Electronics Letters |
Volume | 53 |
Issue number | 14 |
DOIs | |
Publication status | Published - 2017 Jul 6 |
Bibliographical note
Publisher Copyright:© The Institution of Engineering and Technology 2017.
All Science Journal Classification (ASJC) codes
- Electrical and Electronic Engineering