Dynamic and static photo-responses of n-ZnO/p-Si photodiodes

Y. S. Choi; J. Y. Lee; S. Im; S. J. Lee

doi:10.1143/jjap.42.1560

Dynamic and static photo-responses of n-ZnO/p-Si photodiodes

Y. S. Choi, J. Y. Lee, S. Im, S. J. Lee

Department of Physics

Research output: Contribution to journal › Article › peer-review

20 Citations (Scopus)

Abstract

We report on the photo-response behavior of n-ZnO/p-Si photodiodes. Semiconducting n-ZnO films have been deposited on p-Si substrate by RF sputtering at 300, 480 and 550°C. An optimum static photo-response was achieved from the photodiode prepared at 480°C as characterized by photocurrent measurements using a continuous monochromatic red illumination. Temporal photo-response of 35 ns was obtained from the same n-ZnO/p-Si diode to which a high frequency modulation of 1.5 MHz was applied for the dynamic response measurements. It is concluded that the n-ZnO/p-Si photodiode has good detecting capabilities in both of the dynamic and static photo-responses.

Original language	English
Pages (from-to)	1560-1562
Number of pages	3
Journal	Japanese Journal of Applied Physics
Volume	42
Issue number	4 A
DOIs	https://doi.org/10.1143/jjap.42.1560
Publication status	Published - 2003 Apr

All Science Journal Classification (ASJC) codes

Engineering(all)
Physics and Astronomy(all)

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@article{0a0d0f62b0c34a32933725917f306b36,

title = "Dynamic and static photo-responses of n-ZnO/p-Si photodiodes",

abstract = "We report on the photo-response behavior of n-ZnO/p-Si photodiodes. Semiconducting n-ZnO films have been deposited on p-Si substrate by RF sputtering at 300, 480 and 550°C. An optimum static photo-response was achieved from the photodiode prepared at 480°C as characterized by photocurrent measurements using a continuous monochromatic red illumination. Temporal photo-response of 35 ns was obtained from the same n-ZnO/p-Si diode to which a high frequency modulation of 1.5 MHz was applied for the dynamic response measurements. It is concluded that the n-ZnO/p-Si photodiode has good detecting capabilities in both of the dynamic and static photo-responses.",

author = "Choi, {Y. S.} and Lee, {J. Y.} and S. Im and Lee, {S. J.}",

year = "2003",

month = apr,

doi = "10.1143/jjap.42.1560",

language = "English",

volume = "42",

pages = "1560--1562",

journal = "Japanese Journal of Applied Physics",

issn = "0021-4922",

number = "4 A",

}

TY - JOUR

T1 - Dynamic and static photo-responses of n-ZnO/p-Si photodiodes

AU - Choi, Y. S.

AU - Lee, J. Y.

AU - Im, S.

AU - Lee, S. J.

PY - 2003/4

Y1 - 2003/4

N2 - We report on the photo-response behavior of n-ZnO/p-Si photodiodes. Semiconducting n-ZnO films have been deposited on p-Si substrate by RF sputtering at 300, 480 and 550°C. An optimum static photo-response was achieved from the photodiode prepared at 480°C as characterized by photocurrent measurements using a continuous monochromatic red illumination. Temporal photo-response of 35 ns was obtained from the same n-ZnO/p-Si diode to which a high frequency modulation of 1.5 MHz was applied for the dynamic response measurements. It is concluded that the n-ZnO/p-Si photodiode has good detecting capabilities in both of the dynamic and static photo-responses.

AB - We report on the photo-response behavior of n-ZnO/p-Si photodiodes. Semiconducting n-ZnO films have been deposited on p-Si substrate by RF sputtering at 300, 480 and 550°C. An optimum static photo-response was achieved from the photodiode prepared at 480°C as characterized by photocurrent measurements using a continuous monochromatic red illumination. Temporal photo-response of 35 ns was obtained from the same n-ZnO/p-Si diode to which a high frequency modulation of 1.5 MHz was applied for the dynamic response measurements. It is concluded that the n-ZnO/p-Si photodiode has good detecting capabilities in both of the dynamic and static photo-responses.

UR - http://www.scopus.com/inward/record.url?scp=0038269278&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0038269278&partnerID=8YFLogxK

U2 - 10.1143/jjap.42.1560

DO - 10.1143/jjap.42.1560

M3 - Article

AN - SCOPUS:0038269278

SN - 0021-4922

VL - 42

SP - 1560

EP - 1562

JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

IS - 4 A

ER -

Dynamic and static photo-responses of n-ZnO/p-Si photodiodes

Abstract

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