Dynamic and static photo-responses of n-ZnO/p-Si photodiodes

Y. S. Choi, J. Y. Lee, S. Im, S. J. Lee

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20 Citations (Scopus)


We report on the photo-response behavior of n-ZnO/p-Si photodiodes. Semiconducting n-ZnO films have been deposited on p-Si substrate by RF sputtering at 300, 480 and 550°C. An optimum static photo-response was achieved from the photodiode prepared at 480°C as characterized by photocurrent measurements using a continuous monochromatic red illumination. Temporal photo-response of 35 ns was obtained from the same n-ZnO/p-Si diode to which a high frequency modulation of 1.5 MHz was applied for the dynamic response measurements. It is concluded that the n-ZnO/p-Si photodiode has good detecting capabilities in both of the dynamic and static photo-responses.

Original languageEnglish
Pages (from-to)1560-1562
Number of pages3
JournalJapanese Journal of Applied Physics
Issue number4 A
Publication statusPublished - 2003 Apr

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)


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