Dual-gate InGaZnO thin-film transistors with organic polymer as a dielectric layer

Ji Hyuk Choi; Hyun Sik Seo; Jae Min Myoung

doi:10.1149/1.3077176

Dual-gate InGaZnO thin-film transistors with organic polymer as a dielectric layer

Ji Hyuk Choi, Hyun Sik Seo, Jae Min Myoung

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

16 Citations (Scopus)

Abstract

Dual-gated (DG) thin-film transistors (TFTs) with an amorphous InGaZnO (IGZO) channel are fabricated using a poly(4-vinyl phenol) polymer as a dielectric layer. Compared to single-gated (SG) devices, DG devices showed much stronger gate controllability and greatly enhanced device performance over conventional SG TFTs. Although all devices exhibited a positive V_th shift under positive bias stress, the highly stable V_th shift of 0.17 V was observed for the IGZO TFT with DG structure. It is demonstrated that DG operation is an appropriate gate configuration to produce high-performance TFTs, which is applicable to low-power devices.

Original language	English
Pages (from-to)	H145-H148
Journal	Electrochemical and Solid-State Letters
Volume	12
Issue number	4
DOIs	https://doi.org/10.1149/1.3077176
Publication status	Published - 2009

All Science Journal Classification (ASJC) codes

Chemical Engineering(all)
Materials Science(all)
Physical and Theoretical Chemistry
Electrochemistry
Electrical and Electronic Engineering

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10.1149/1.3077176

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@article{c52dbfbd89c5458da86152f64efe5885,

title = "Dual-gate InGaZnO thin-film transistors with organic polymer as a dielectric layer",

abstract = "Dual-gated (DG) thin-film transistors (TFTs) with an amorphous InGaZnO (IGZO) channel are fabricated using a poly(4-vinyl phenol) polymer as a dielectric layer. Compared to single-gated (SG) devices, DG devices showed much stronger gate controllability and greatly enhanced device performance over conventional SG TFTs. Although all devices exhibited a positive Vth shift under positive bias stress, the highly stable Vth shift of 0.17 V was observed for the IGZO TFT with DG structure. It is demonstrated that DG operation is an appropriate gate configuration to produce high-performance TFTs, which is applicable to low-power devices.",

author = "Choi, {Ji Hyuk} and Seo, {Hyun Sik} and Myoung, {Jae Min}",

year = "2009",

doi = "10.1149/1.3077176",

language = "English",

volume = "12",

pages = "H145--H148",

journal = "Electrochemical and Solid-State Letters",

issn = "1099-0062",

publisher = "Electrochemical Society, Inc.",

number = "4",

}

TY - JOUR

T1 - Dual-gate InGaZnO thin-film transistors with organic polymer as a dielectric layer

AU - Choi, Ji Hyuk

AU - Seo, Hyun Sik

AU - Myoung, Jae Min

PY - 2009

Y1 - 2009

N2 - Dual-gated (DG) thin-film transistors (TFTs) with an amorphous InGaZnO (IGZO) channel are fabricated using a poly(4-vinyl phenol) polymer as a dielectric layer. Compared to single-gated (SG) devices, DG devices showed much stronger gate controllability and greatly enhanced device performance over conventional SG TFTs. Although all devices exhibited a positive Vth shift under positive bias stress, the highly stable Vth shift of 0.17 V was observed for the IGZO TFT with DG structure. It is demonstrated that DG operation is an appropriate gate configuration to produce high-performance TFTs, which is applicable to low-power devices.

AB - Dual-gated (DG) thin-film transistors (TFTs) with an amorphous InGaZnO (IGZO) channel are fabricated using a poly(4-vinyl phenol) polymer as a dielectric layer. Compared to single-gated (SG) devices, DG devices showed much stronger gate controllability and greatly enhanced device performance over conventional SG TFTs. Although all devices exhibited a positive Vth shift under positive bias stress, the highly stable Vth shift of 0.17 V was observed for the IGZO TFT with DG structure. It is demonstrated that DG operation is an appropriate gate configuration to produce high-performance TFTs, which is applicable to low-power devices.

UR - http://www.scopus.com/inward/record.url?scp=60449117107&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=60449117107&partnerID=8YFLogxK

U2 - 10.1149/1.3077176

DO - 10.1149/1.3077176

M3 - Article

AN - SCOPUS:60449117107

SN - 1099-0062

VL - 12

SP - H145-H148

JO - Electrochemical and Solid-State Letters

JF - Electrochemical and Solid-State Letters

IS - 4

ER -

Dual-gate InGaZnO thin-film transistors with organic polymer as a dielectric layer

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