Dramatic Reduction of Contact Resistance via Ultrathin LiF in Two-Dimensional MoS2Field Effect Transistors

Hyunmin Cho, Donghee Kang, Yangjin Lee, Heesun Bae, Sungjae Hong, Yongjae Cho, Kwanpyo Kim, Yeonjin Yi, Ji Hoon Park, Seongil Im

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17 Citations (Scopus)


Molybdenum disulfide (MoS2) has been regarded as one of the most important n-type two-dimensional (2D) transition metal dichalcogenide semiconductors for nanoscale electron devices. Relatively high contact resistance (RC) remains as an issue in the 2D-devices yet to be resolved. Reliable technique is very compelling to practically produce low RC values in device electronics, although scientific approaches have been made to obtain a record-low RC. To resolve this practical issue, we here use thermal-evaporated ultrathin LiF between channel and source/drain metal to fabricate 2D-like MoS2 field effect transistors (FETs) with minimum RC. Under 4-bar FET method, RC less than ∼600 ω·μm is achieved from the LiF/Au contact MoS2 FET. Our normal 2-bar FET with LiF thus shows the same mobility as that of 4-bar FET that should have no RC in principle. On the basis of these results, ultrathin LiF is also applied for transparent conducting oxide contact, successfully enabling transparent MoS2 FETs.

Original languageEnglish
Pages (from-to)3503-3510
Number of pages8
JournalNano letters
Issue number8
Publication statusPublished - 2021 Apr 28

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All Science Journal Classification (ASJC) codes

  • Bioengineering
  • General Chemistry
  • General Materials Science
  • Condensed Matter Physics
  • Mechanical Engineering


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