Double electrical percolation phenomenon during the crystallization of an amorphous Ge2Sb2Te5 thin film under continuous heating

Yunjung Choi; Young Kook Lee

doi:10.1063/1.3298357

Double electrical percolation phenomenon during the crystallization of an amorphous Ge₂Sb₂Te₅ thin film under continuous heating

Yunjung Choi, Young Kook Lee

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

Crystallization behaviors of an amorphous Ge₂Sb ₂Te₅ thin film were investigated by in situ measurements of electrical resistivity R_el and optical reflectivity R_op and by transmission electron microscopy during isothermal annealing and continuous heating. R_op increased first and then Rel decreased during the initial stage of crystallization for both annealing conditions due to the electrical percolation of heterogeneous crystallization at the film surface. The two-step decrease in R_el during continuous heating, unlike the monotonous decrease in R_el during isothermal annealing, was induced by the percolation phenomenon via homogeneous crystallization inside the film. The effective activation energy for homogeneous crystallization was 4.30 eV.

Original language	English
Article number	041910
Journal	Applied Physics Letters
Volume	96
Issue number	4
DOIs	https://doi.org/10.1063/1.3298357
Publication status	Published - 2010

Bibliographical note

Funding Information:
This work was supported by Next-generation growth engine project of the Ministry of Knowledge Economy.

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.3298357

Cite this

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abstract = "Crystallization behaviors of an amorphous Ge2Sb 2Te5 thin film were investigated by in situ measurements of electrical resistivity Rel and optical reflectivity Rop and by transmission electron microscopy during isothermal annealing and continuous heating. Rop increased first and then Rel decreased during the initial stage of crystallization for both annealing conditions due to the electrical percolation of heterogeneous crystallization at the film surface. The two-step decrease in Rel during continuous heating, unlike the monotonous decrease in Rel during isothermal annealing, was induced by the percolation phenomenon via homogeneous crystallization inside the film. The effective activation energy for homogeneous crystallization was 4.30 eV.",

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AB - Crystallization behaviors of an amorphous Ge2Sb 2Te5 thin film were investigated by in situ measurements of electrical resistivity Rel and optical reflectivity Rop and by transmission electron microscopy during isothermal annealing and continuous heating. Rop increased first and then Rel decreased during the initial stage of crystallization for both annealing conditions due to the electrical percolation of heterogeneous crystallization at the film surface. The two-step decrease in Rel during continuous heating, unlike the monotonous decrease in Rel during isothermal annealing, was induced by the percolation phenomenon via homogeneous crystallization inside the film. The effective activation energy for homogeneous crystallization was 4.30 eV.

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