Double boosting pump, hybrid current sense amplifier, and binary weighted temperature sensor adjustment schemes for 1.8V 128Mb mobile DRAMs

Jae Yoon Sim; Hongil Yoon; Ki Chul Chun; Hyun Seok Lee; Sang Pyo Hong; Soo Young Kim; Min Soo Kim; Kyu Chan Lee; Jei Hwan Yoo; Dong Il Seo; Soo In Cho

Double boosting pump, hybrid current sense amplifier, and binary weighted temperature sensor adjustment schemes for 1.8V 128Mb mobile DRAMs

Jae Yoon Sim, Hongil Yoon, Ki Chul Chun, Hyun Seok Lee, Sang Pyo Hong, Soo Young Kim, Min Soo Kim, Kyu Chan Lee, Jei Hwan Yoo, Dong Il Seo, Soo In Cho

Department of Electrical and Electronic Engineering

Research output: Contribution to conference › Paper › peer-review

9 Citations (Scopus)

Abstract

A 1.8V 128Mb SDRAM is implemented for low current mobile applications with a 0.15μm technology. The double boosting pump and hybrid current sense amplifier schemes are optimized for the low voltage regime with high pumping efficiency and stable I-to-V gain, respectively. A Temperature sensor together with the binary weighted adjustment technique allow a very accurate implementation without loss in productivity.

Original language	English
Pages	294-297
Number of pages	4
Publication status	Published - 2002
Event	2002 Symposium on VLSI Circuits Digest of Technical Papers - Honolulu, HI, United States Duration: 2002 Jun 13 → 2002 Jun 15

Other

Other	2002 Symposium on VLSI Circuits Digest of Technical Papers
Country/Territory	United States
City	Honolulu, HI
Period	02/6/13 → 02/6/15

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Cite this

Sim, J. Y., Yoon, H., Chun, K. C., Lee, H. S., Hong, S. P., Kim, S. Y., Kim, M. S., Lee, K. C., Yoo, J. H., Seo, D. I., & Cho, S. I. (2002). Double boosting pump, hybrid current sense amplifier, and binary weighted temperature sensor adjustment schemes for 1.8V 128Mb mobile DRAMs. 294-297. Paper presented at 2002 Symposium on VLSI Circuits Digest of Technical Papers, Honolulu, HI, United States.

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title = "Double boosting pump, hybrid current sense amplifier, and binary weighted temperature sensor adjustment schemes for 1.8V 128Mb mobile DRAMs",

abstract = "A 1.8V 128Mb SDRAM is implemented for low current mobile applications with a 0.15μm technology. The double boosting pump and hybrid current sense amplifier schemes are optimized for the low voltage regime with high pumping efficiency and stable I-to-V gain, respectively. A Temperature sensor together with the binary weighted adjustment technique allow a very accurate implementation without loss in productivity.",

author = "Sim, {Jae Yoon} and Hongil Yoon and Chun, {Ki Chul} and Lee, {Hyun Seok} and Hong, {Sang Pyo} and Kim, {Soo Young} and Kim, {Min Soo} and Lee, {Kyu Chan} and Yoo, {Jei Hwan} and Seo, {Dong Il} and Cho, {Soo In}",

year = "2002",

language = "English",

pages = "294--297",

note = "2002 Symposium on VLSI Circuits Digest of Technical Papers ; Conference date: 13-06-2002 Through 15-06-2002",

}

Sim, JY, Yoon, H, Chun, KC, Lee, HS, Hong, SP, Kim, SY, Kim, MS, Lee, KC, Yoo, JH, Seo, DI & Cho, SI 2002, 'Double boosting pump, hybrid current sense amplifier, and binary weighted temperature sensor adjustment schemes for 1.8V 128Mb mobile DRAMs', Paper presented at 2002 Symposium on VLSI Circuits Digest of Technical Papers, Honolulu, HI, United States, 02/6/13 - 02/6/15 pp. 294-297.

Double boosting pump, hybrid current sense amplifier, and binary weighted temperature sensor adjustment schemes for 1.8V 128Mb mobile DRAMs. / Sim, Jae Yoon; Yoon, Hongil; Chun, Ki Chul et al.
2002. 294-297 Paper presented at 2002 Symposium on VLSI Circuits Digest of Technical Papers, Honolulu, HI, United States.

Research output: Contribution to conference › Paper › peer-review

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T1 - Double boosting pump, hybrid current sense amplifier, and binary weighted temperature sensor adjustment schemes for 1.8V 128Mb mobile DRAMs

AU - Sim, Jae Yoon

AU - Yoon, Hongil

AU - Chun, Ki Chul

AU - Lee, Hyun Seok

AU - Hong, Sang Pyo

AU - Kim, Soo Young

AU - Kim, Min Soo

AU - Lee, Kyu Chan

AU - Yoo, Jei Hwan

AU - Seo, Dong Il

AU - Cho, Soo In

PY - 2002

Y1 - 2002

N2 - A 1.8V 128Mb SDRAM is implemented for low current mobile applications with a 0.15μm technology. The double boosting pump and hybrid current sense amplifier schemes are optimized for the low voltage regime with high pumping efficiency and stable I-to-V gain, respectively. A Temperature sensor together with the binary weighted adjustment technique allow a very accurate implementation without loss in productivity.

AB - A 1.8V 128Mb SDRAM is implemented for low current mobile applications with a 0.15μm technology. The double boosting pump and hybrid current sense amplifier schemes are optimized for the low voltage regime with high pumping efficiency and stable I-to-V gain, respectively. A Temperature sensor together with the binary weighted adjustment technique allow a very accurate implementation without loss in productivity.

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T2 - 2002 Symposium on VLSI Circuits Digest of Technical Papers

Y2 - 13 June 2002 through 15 June 2002

ER -

Double boosting pump, hybrid current sense amplifier, and binary weighted temperature sensor adjustment schemes for 1.8V 128Mb mobile DRAMs

Abstract

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All Science Journal Classification (ASJC) codes

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