Domain epitaxy of crystalline BeO films on GaN and ZnO substrates

Seung Min Lee; Jung Hwan Yum; Eric S. Larsen; Shahab Shervin; Weijie Wang; Jae Hyun Ryou; Christopher W. Bielawski; Woo Chul Lee; Seong Keun Kim; Jungwoo Oh

doi:10.1111/jace.16198

Domain epitaxy of crystalline BeO films on GaN and ZnO substrates

Seung Min Lee, Jung Hwan Yum, Eric S. Larsen, Shahab Shervin, Weijie Wang, Jae Hyun Ryou, Christopher W. Bielawski, Woo Chul Lee, Seong Keun Kim, Jungwoo Oh

School of Integrated Technology

Research output: Contribution to journal › Article › peer-review

12 Citations (Scopus)

Abstract

We demonstrated the growth of wurtzite-crystalline beryllium oxide (BeO) thin films on GaN and ZnO substrates using atomic layer deposition (ALD). Single-crystalline BeO were epitaxially grown on GaN. Despite the inherently large lattice mismatch of BeO and GaN atoms, the 6/5 and 7/6 domain-matched structures dramatically reduced the residual strain in BeO thin films. On the other hand, the lattice mismatch of BeO and ZnO was not effectively accommodated in the mixed domains. X-ray diffraction (XRD) confirmed the in-plane crystallization of BeO-on-substrates in the (002){102} _BeO ||(002){102} _Sub orientation and relaxation degrees of 20.8% (GaN), 100% (ZnO). The theoretical critical thicknesses of BeO for strain relaxation were 2.2 μm (GaN) and 1.6 nm (ZnO), calculated using a total film energy model. Transmission electron microscopy (TEM) and Fourier-filtered imaging supported the bonding configuration and crystallinity of wurtzite BeO thin films on GaN and ZnO substrates.

Original language	English
Pages (from-to)	3745-3752
Number of pages	8
Journal	Journal of the American Ceramic Society
Volume	102
Issue number	6
DOIs	https://doi.org/10.1111/jace.16198
Publication status	Published - 2019 Jun

Bibliographical note

Funding Information:
This research was supported by the Ministry of Science and ICT (MSIT), Korea, under the ICT Consilience Creative Program (IITP‐2018‐2017‐0‐01015) supervised by the Institute for Information & communications Technology Promotion (IITP). It was also supported by the Future Semiconductor Device Technology Development Program (10048536), which is funded by the Ministry of Trade, Industry & Energy and the Korea Semiconductor Research Consortium. JHY, ESL, and CWB are grateful to the Institute for Basic Science (IBS‐R019‐D1) as well as the BK21 Plus Program funded by the Ministry of Education and the National Research Foundation of Korea for their support. The work at the University of Houston was supported by the IT R&D program of MOTIE/KEIT (Grant No. 10048933, Development of epitaxial structure design and epitaxial growth system for high‐voltage power semiconductors). JHR also acknowledges partial support from the Texas Center for Superconductivity at the University of Houston (TcSUH).

Publisher Copyright:
© 2018 The American Ceramic Society

All Science Journal Classification (ASJC) codes

Ceramics and Composites
Materials Chemistry

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10.1111/jace.16198

Cite this

@article{22ba71294eb347d7a60c1810d314f8b6,

title = "Domain epitaxy of crystalline BeO films on GaN and ZnO substrates",

abstract = " We demonstrated the growth of wurtzite-crystalline beryllium oxide (BeO) thin films on GaN and ZnO substrates using atomic layer deposition (ALD). Single-crystalline BeO were epitaxially grown on GaN. Despite the inherently large lattice mismatch of BeO and GaN atoms, the 6/5 and 7/6 domain-matched structures dramatically reduced the residual strain in BeO thin films. On the other hand, the lattice mismatch of BeO and ZnO was not effectively accommodated in the mixed domains. X-ray diffraction (XRD) confirmed the in-plane crystallization of BeO-on-substrates in the (002){102} BeO ||(002){102} Sub orientation and relaxation degrees of 20.8% (GaN), 100% (ZnO). The theoretical critical thicknesses of BeO for strain relaxation were 2.2 μm (GaN) and 1.6 nm (ZnO), calculated using a total film energy model. Transmission electron microscopy (TEM) and Fourier-filtered imaging supported the bonding configuration and crystallinity of wurtzite BeO thin films on GaN and ZnO substrates.",

author = "Lee, {Seung Min} and Yum, {Jung Hwan} and Larsen, {Eric S.} and Shahab Shervin and Weijie Wang and Ryou, {Jae Hyun} and Bielawski, {Christopher W.} and Lee, {Woo Chul} and Kim, {Seong Keun} and Jungwoo Oh",

note = "Funding Information: This research was supported by the Ministry of Science and ICT (MSIT), Korea, under the ICT Consilience Creative Program (IITP‐2018‐2017‐0‐01015) supervised by the Institute for Information & communications Technology Promotion (IITP). It was also supported by the Future Semiconductor Device Technology Development Program (10048536), which is funded by the Ministry of Trade, Industry & Energy and the Korea Semiconductor Research Consortium. JHY, ESL, and CWB are grateful to the Institute for Basic Science (IBS‐R019‐D1) as well as the BK21 Plus Program funded by the Ministry of Education and the National Research Foundation of Korea for their support. The work at the University of Houston was supported by the IT R&D program of MOTIE/KEIT (Grant No. 10048933, Development of epitaxial structure design and epitaxial growth system for high‐voltage power semiconductors). JHR also acknowledges partial support from the Texas Center for Superconductivity at the University of Houston (TcSUH). Publisher Copyright: {\textcopyright} 2018 The American Ceramic Society",

year = "2019",

month = jun,

doi = "10.1111/jace.16198",

language = "English",

volume = "102",

pages = "3745--3752",

journal = "Journal of the American Ceramic Society",

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TY - JOUR

T1 - Domain epitaxy of crystalline BeO films on GaN and ZnO substrates

AU - Lee, Seung Min

AU - Yum, Jung Hwan

AU - Larsen, Eric S.

AU - Shervin, Shahab

AU - Wang, Weijie

AU - Ryou, Jae Hyun

AU - Bielawski, Christopher W.

AU - Lee, Woo Chul

AU - Kim, Seong Keun

AU - Oh, Jungwoo

N1 - Funding Information: This research was supported by the Ministry of Science and ICT (MSIT), Korea, under the ICT Consilience Creative Program (IITP‐2018‐2017‐0‐01015) supervised by the Institute for Information & communications Technology Promotion (IITP). It was also supported by the Future Semiconductor Device Technology Development Program (10048536), which is funded by the Ministry of Trade, Industry & Energy and the Korea Semiconductor Research Consortium. JHY, ESL, and CWB are grateful to the Institute for Basic Science (IBS‐R019‐D1) as well as the BK21 Plus Program funded by the Ministry of Education and the National Research Foundation of Korea for their support. The work at the University of Houston was supported by the IT R&D program of MOTIE/KEIT (Grant No. 10048933, Development of epitaxial structure design and epitaxial growth system for high‐voltage power semiconductors). JHR also acknowledges partial support from the Texas Center for Superconductivity at the University of Houston (TcSUH). Publisher Copyright: © 2018 The American Ceramic Society

PY - 2019/6

Y1 - 2019/6

N2 - We demonstrated the growth of wurtzite-crystalline beryllium oxide (BeO) thin films on GaN and ZnO substrates using atomic layer deposition (ALD). Single-crystalline BeO were epitaxially grown on GaN. Despite the inherently large lattice mismatch of BeO and GaN atoms, the 6/5 and 7/6 domain-matched structures dramatically reduced the residual strain in BeO thin films. On the other hand, the lattice mismatch of BeO and ZnO was not effectively accommodated in the mixed domains. X-ray diffraction (XRD) confirmed the in-plane crystallization of BeO-on-substrates in the (002){102} BeO ||(002){102} Sub orientation and relaxation degrees of 20.8% (GaN), 100% (ZnO). The theoretical critical thicknesses of BeO for strain relaxation were 2.2 μm (GaN) and 1.6 nm (ZnO), calculated using a total film energy model. Transmission electron microscopy (TEM) and Fourier-filtered imaging supported the bonding configuration and crystallinity of wurtzite BeO thin films on GaN and ZnO substrates.

AB - We demonstrated the growth of wurtzite-crystalline beryllium oxide (BeO) thin films on GaN and ZnO substrates using atomic layer deposition (ALD). Single-crystalline BeO were epitaxially grown on GaN. Despite the inherently large lattice mismatch of BeO and GaN atoms, the 6/5 and 7/6 domain-matched structures dramatically reduced the residual strain in BeO thin films. On the other hand, the lattice mismatch of BeO and ZnO was not effectively accommodated in the mixed domains. X-ray diffraction (XRD) confirmed the in-plane crystallization of BeO-on-substrates in the (002){102} BeO ||(002){102} Sub orientation and relaxation degrees of 20.8% (GaN), 100% (ZnO). The theoretical critical thicknesses of BeO for strain relaxation were 2.2 μm (GaN) and 1.6 nm (ZnO), calculated using a total film energy model. Transmission electron microscopy (TEM) and Fourier-filtered imaging supported the bonding configuration and crystallinity of wurtzite BeO thin films on GaN and ZnO substrates.

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DO - 10.1111/jace.16198

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SN - 0002-7820

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JO - Journal of the American Ceramic Society

JF - Journal of the American Ceramic Society

IS - 6

ER -

Domain epitaxy of crystalline BeO films on GaN and ZnO substrates

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