Direct-patterning of SnO2 thin film by photochemical metal-organic deposition

Hyeong Ho Park; Hyung Ho Park; Ross H. Hill

doi:10.1016/j.sna.2006.02.030

Direct-patterning of SnO₂ thin film by photochemical metal-organic deposition

Hyeong Ho Park, Hyung Ho Park, Ross H. Hill

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

30 Citations (Scopus)

Abstract

The optical and electrical properties were characterized with direct-patternable SnO₂ thin film prepared by photochemical metal-organic deposition (PMOD) using photosensitive starting precursors. Fourier transform infrared spectroscopic analysis showed that a complete removal of organic groups was possible by an exposure of spin-coated SnO₂ precursor film to UV at room temperature. According to the increase in anneal temperature, i.e., amelioration in the crystallinity and structural homogeneity of SnO₂ film, optical transmission and resistivity improved; especially in case of optical transmission, there was also an effect from the decrease in film thickness. Direct-patternable SnO₂ film annealed at 800 °C showed the values of average transmittance in visible region and resistivity as 92.28% and 1.61 × 10^-2 Ω cm, respectively.

Original language	English
Pages (from-to)	429-433
Number of pages	5
Journal	Sensors and Actuators, A: Physical
Volume	132
Issue number	2
DOIs	https://doi.org/10.1016/j.sna.2006.02.030
Publication status	Published - 2006 Nov 20

Bibliographical note

Funding Information:
This work was supported by grant no. F01-2004-000-10093-0 from the International Cooperative Research Program of the Korea Science and Engineering Foundation.

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Instrumentation
Condensed Matter Physics
Surfaces, Coatings and Films
Metals and Alloys
Electrical and Electronic Engineering

Access to Document

10.1016/j.sna.2006.02.030

Cite this

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title = "Direct-patterning of SnO2 thin film by photochemical metal-organic deposition",

abstract = "The optical and electrical properties were characterized with direct-patternable SnO2 thin film prepared by photochemical metal-organic deposition (PMOD) using photosensitive starting precursors. Fourier transform infrared spectroscopic analysis showed that a complete removal of organic groups was possible by an exposure of spin-coated SnO2 precursor film to UV at room temperature. According to the increase in anneal temperature, i.e., amelioration in the crystallinity and structural homogeneity of SnO2 film, optical transmission and resistivity improved; especially in case of optical transmission, there was also an effect from the decrease in film thickness. Direct-patternable SnO2 film annealed at 800 °C showed the values of average transmittance in visible region and resistivity as 92.28% and 1.61 × 10-2 Ω cm, respectively.",

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