Direct growth of bismuth telluride nanowires by on-film formation of nanowires for high-efficiency thermoelectric devices

Jinhee Ham; Wooyoung Shim; Do Hyun Kim; Seunghyun Lee; Jongwook Roh; Sung Woo Sohn; Kyu Hwan Oh; Peter W. Voorhees; Wooyoung Lee

doi:10.1109/INEC.2010.5424556

Direct growth of bismuth telluride nanowires by on-film formation of nanowires for high-efficiency thermoelectric devices

Jinhee Ham, Wooyoung Shim, Do Hyun Kim, Seunghyun Lee, Jongwook Roh, Sung Woo Sohn, Kyu Hwan Oh, Peter W. Voorhees, Wooyoung Lee

Department of Materials Science and Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We report a novel stress-induced method to grow single crystalline Bi ₂Te₃ nanowires, On Film Formation of Nanowires (OFF-ON), their growth mechanism and transport properties. Single crystalline Bi ₂Te₃ nanowires were found to grow on as-sputtered BiTe films after thermal annealing at 350°C. This growth was facilitated by stress relaxation between the film and the thermally oxidized Si substrate originating from a mismatch of the thermal expansion. The mechanism for wire growth is stress-induced mass flow along grain boundaries in the polycrystalline film.

Original language	English
Title of host publication	INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings
Pages	105-106
Number of pages	2
DOIs	https://doi.org/10.1109/INEC.2010.5424556
Publication status	Published - 2010
Event	2010 3rd International Nanoelectronics Conference, INEC 2010 - Hongkong, China Duration: 2010 Jan 3 → 2010 Jan 8

Publication series

Name	INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings

Other

Other	2010 3rd International Nanoelectronics Conference, INEC 2010
Country/Territory	China
City	Hongkong
Period	10/1/3 → 10/1/8

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

Access to Document

10.1109/INEC.2010.5424556

Cite this

Ham, J., Shim, W., Kim, D. H., Lee, S., Roh, J., Sohn, S. W., Oh, K. H., Voorhees, P. W., & Lee, W. (2010). Direct growth of bismuth telluride nanowires by on-film formation of nanowires for high-efficiency thermoelectric devices. In INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings (pp. 105-106). Article 5424556 (INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings). https://doi.org/10.1109/INEC.2010.5424556

@inproceedings{ea36b14aabfb4203b9ba3747024dabb0,

title = "Direct growth of bismuth telluride nanowires by on-film formation of nanowires for high-efficiency thermoelectric devices",

abstract = "We report a novel stress-induced method to grow single crystalline Bi 2Te3 nanowires, On Film Formation of Nanowires (OFF-ON), their growth mechanism and transport properties. Single crystalline Bi 2Te3 nanowires were found to grow on as-sputtered BiTe films after thermal annealing at 350°C. This growth was facilitated by stress relaxation between the film and the thermally oxidized Si substrate originating from a mismatch of the thermal expansion. The mechanism for wire growth is stress-induced mass flow along grain boundaries in the polycrystalline film.",

author = "Jinhee Ham and Wooyoung Shim and Kim, {Do Hyun} and Seunghyun Lee and Jongwook Roh and Sohn, {Sung Woo} and Oh, {Kyu Hwan} and Voorhees, {Peter W.} and Wooyoung Lee",

year = "2010",

doi = "10.1109/INEC.2010.5424556",

language = "English",

isbn = "9781424435449",

series = "INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings",

pages = "105--106",

booktitle = "INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings",

note = "2010 3rd International Nanoelectronics Conference, INEC 2010 ; Conference date: 03-01-2010 Through 08-01-2010",

}

Ham, J, Shim, W, Kim, DH, Lee, S, Roh, J, Sohn, SW, Oh, KH, Voorhees, PW & Lee, W 2010, Direct growth of bismuth telluride nanowires by on-film formation of nanowires for high-efficiency thermoelectric devices. in INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings., 5424556, INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings, pp. 105-106, 2010 3rd International Nanoelectronics Conference, INEC 2010, Hongkong, China, 10/1/3. https://doi.org/10.1109/INEC.2010.5424556

Direct growth of bismuth telluride nanowires by on-film formation of nanowires for high-efficiency thermoelectric devices. / Ham, Jinhee; Shim, Wooyoung; Kim, Do Hyun et al.
INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings. 2010. p. 105-106 5424556 (INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Direct growth of bismuth telluride nanowires by on-film formation of nanowires for high-efficiency thermoelectric devices

AU - Ham, Jinhee

AU - Shim, Wooyoung

AU - Kim, Do Hyun

AU - Lee, Seunghyun

AU - Roh, Jongwook

AU - Sohn, Sung Woo

AU - Oh, Kyu Hwan

AU - Voorhees, Peter W.

AU - Lee, Wooyoung

PY - 2010

Y1 - 2010

N2 - We report a novel stress-induced method to grow single crystalline Bi 2Te3 nanowires, On Film Formation of Nanowires (OFF-ON), their growth mechanism and transport properties. Single crystalline Bi 2Te3 nanowires were found to grow on as-sputtered BiTe films after thermal annealing at 350°C. This growth was facilitated by stress relaxation between the film and the thermally oxidized Si substrate originating from a mismatch of the thermal expansion. The mechanism for wire growth is stress-induced mass flow along grain boundaries in the polycrystalline film.

AB - We report a novel stress-induced method to grow single crystalline Bi 2Te3 nanowires, On Film Formation of Nanowires (OFF-ON), their growth mechanism and transport properties. Single crystalline Bi 2Te3 nanowires were found to grow on as-sputtered BiTe films after thermal annealing at 350°C. This growth was facilitated by stress relaxation between the film and the thermally oxidized Si substrate originating from a mismatch of the thermal expansion. The mechanism for wire growth is stress-induced mass flow along grain boundaries in the polycrystalline film.

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U2 - 10.1109/INEC.2010.5424556

DO - 10.1109/INEC.2010.5424556

M3 - Conference contribution

AN - SCOPUS:77951659201

SN - 9781424435449

T3 - INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings

SP - 105

EP - 106

BT - INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings

T2 - 2010 3rd International Nanoelectronics Conference, INEC 2010

Y2 - 3 January 2010 through 8 January 2010

ER -

Ham J, Shim W, Kim DH, Lee S, Roh J, Sohn SW et al. Direct growth of bismuth telluride nanowires by on-film formation of nanowires for high-efficiency thermoelectric devices. In INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings. 2010. p. 105-106. 5424556. (INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings). doi: 10.1109/INEC.2010.5424556

Direct growth of bismuth telluride nanowires by on-film formation of nanowires for high-efficiency thermoelectric devices

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