Direct gravure printing of silicon nanowires using entropic attraction forces

Jungmok Seo, Hyonik Lee, Seulah Lee, Tae Il Lee, Jae Min Myoung, Taeyoon Lee

Research output: Contribution to journalArticlepeer-review

12 Citations (Scopus)


The development of a method for large-scale printing of nanowire (NW) arrays onto a desired substrate is crucial for fabricating high-performance NW-based electronics. Here, the alignment of highly ordered and dense silicon (Si) NW arrays at anisotropically etched micro-engraved structures is demonstrated using a simple evaporation process. During evaporation, entropic attraction combined with the internal flow of the NW solution induced the alignment of NWs at the corners of pre-defined structures, and the assembly characteristics of the NWs were highly dependent on the polarity of the NW solutions. After complete evaporation, the aligned NW arrays are subsequently transferred onto a flexible substrate with 95% selectivity using a direct gravure printing technique. As a proof-of-concept, flexible back-gated NW field-effect transistors (FETs) are fabricated. The fabricated FETs have an effective hole mobility of 17.1 cm2·V -1·s-1 and an on/off ratio of ∼2.6 × 105.

Original languageEnglish
Pages (from-to)1614-1621
Number of pages8
Issue number10
Publication statusPublished - 2012 May 21

All Science Journal Classification (ASJC) codes

  • Biotechnology
  • Biomaterials
  • Chemistry(all)
  • Materials Science(all)


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