Diffusion of Zn in stoichiometric LiTaO3

Ilho Song, Hyunkwon Shin, Minchang Cheong, Jaemin Myoung, Myeongkyu Lee

Research output: Contribution to journalArticlepeer-review


As stoichiometric LiTaO3 (LT) draws a considerable attention for integrated optical waveguide devices, we have investigated Zn diffusion into this material by diffusing 70- nm-thick ZnO films deposited on y-cut LT substrates at 700-900 °C under various atmospheres. It was observed that the surface quality was very sensitive to pressure, but weakly affected by other diffusion conditions such as temperature and atmosphere. While the surface degraded, being covered with some residuals after heat treatment at the atmospheric pressure, it was very smooth and clear when the pressure was lowered below about 10 Torr. Another feature of Zn-diffused stoichiometric LT is that the crystal maintains its transparency even after diffusion at a pressure as low as 0.1 Torr, thus without a post-annealing step required. The diffusion coefficient varied from D = 1.1 × 10-2 to 5.5 × 10 -1 μm2/h in the given temperature range, with an activation energy of ΔE = 1.95±0.3 eV.

Original languageEnglish
Pages (from-to)568-572
Number of pages5
JournalJournal of Crystal Growth
Issue number3-4
Publication statusPublished - 2004 Oct 1

Bibliographical note

Funding Information:
This work was supported by the Korea Research Foundation Grant (KRF- 2002-003-D00146).

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry


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