Devitrification and Delayed Crazing of SiO₂ on Single‐Crystal Silicon and Chemically Vapor‐Deposited Silicon Nitride

Physics

• Growth Rate 100%
• Silicon Nitride 100%
• Crystallization 66%
• Silicon 66%
• Surface Cracks 66%
• Water Vapor 33%
• Silica 33%
• Silicon Dioxide 33%
• Impurities 33%
• Crystal Growth 33%
• Atmospherics 33%
• Utilization 33%
• Magnitude 33%
• Crystals 33%

Chemistry

• Liquid Film 100%
• Crazing 66%
• Crystal Growth 33%
• Crystallization 33%
• Devitrification 33%
• Surface 33%
• Crystalline Material 33%
• Application 33%
• Protective 33%
• Impurity 33%
• Furnace 33%

Material Science

• Growth Rate 100%
• Liquid Films 100%
• Crystallization 33%
• Impurity 33%
• Surface 33%
• Water Vapor 33%
• Crystal 33%
• Crystal Growth 33%