Device isolation of ultraviolet-detecting ZnO-based transistors using energetic B ions

Engineering

• Boron Ion 100%
• Current Ratio 33%
• Deposited Structure 16%
• Energetics 50%
• Fabrication 16%
• Fields 16%
• Gate Bias 16%
• Implanted Device 16%
• Si Substrate 16%
• Ultraviolet Light 16%
• Windows 16%
• Zeros 16%

Physics

• Dark Current 16%
• Deposition 16%
• Fabrication 16%
• Isolation 50%
• Mobility 16%
• Responses 16%
• ZnO 66%

Material Science

• Devices 50%
• Radio Frequency Sputtering 16%
• Thin-Film Transistor 66%