Device isolation of ultraviolet-detecting ZnO-based transistors using energetic B ions

H. S. Bae, Seongil Im, J. H. Song

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6 Citations (Scopus)


We report on the fabrication of ultraviolet (UV)-detecting ZnO-based thin-film transistors (TFTs) and their isolation by energetic B ions. After deposition on a SiO2/p+-Si substrate at 300°C by radio frequency (rf) sputtering, the ZnO layer was patterned with Al source/drain (S/D) contacts and a SiOx window. Then energetic B ions with 30 and 55 keV were implanted onto the deposited structures for device isolation. Among the three samples of unimplanted, 30 keV-, and 55 keV-implanted devices, the 55 keV-implanted one displayed the least gate current leakage (∼100 pA). The ZnO-TFT isolated with 55 keV B also showed a field mobility of 0.7 cm 2/V s and on/off current ratio of more than ∼104, respectively. Under 364 nm UV light of 0.2 mW/cm2 and at zero volts of gate bias, the device exhibited a photo-to-dark current ratio of ∼5 × 103 with a temporal response of about 10 ms.

Original languageEnglish
Pages (from-to)G791-G794
JournalJournal of the Electrochemical Society
Issue number9
Publication statusPublished - 2006

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Materials Chemistry


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