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Device characteristics of Ti-InSnO thin film transistors with modulated double and triple channel structures
Chang Eun Kim,
Ilgu Yun
Department of Electrical and Electronic Engineering
Research output
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Contribution to journal
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Article
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peer-review
8
Citations (Scopus)
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Engineering
Thin-Film Transistor
100%
Modulated Channel
30%
Characteristics
30%
Channel Structure
20%
Enhancement
10%
Carrier Concentration
10%
Parasitic Resistance
10%
Electrical Performance
10%
Reduction
10%
Physics
Insulators
10%
Electrodes
10%
Field Effect
10%
Modulation
10%
Threshold Voltage
10%
Value
10%
Mobility
10%
Accumulations
10%
Earth and Planetary Sciences
Threshold Voltage
10%
Modulation
10%
Electrode
10%
Isolators
10%
Accumulation
10%
Value
10%
Augmentation
10%
Mobility
10%
Computer Science
Channels
30%
Threshold Voltage
10%
Parasitic Resistance
10%
Carrier Concentration
10%
Transistor Device
10%
Material Science
Devices
30%
Carrier Concentration
10%