Device characteristics of Ti-InSnO thin film transistors with modulated double and triple channel structures

Chang Eun Kim; Ilgu Yun

doi:10.1016/j.tsf.2013.04.030

Device characteristics of Ti-InSnO thin film transistors with modulated double and triple channel structures

Chang Eun Kim, Ilgu Yun

Department of Electrical and Electronic Engineering

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

The device characteristics of Ti-InSnO thin film transistors (TFTs) with modulated channels were investigated. The field effect mobility was enhanced to 14.9 cm²/V s in the channel-modulated TFT. The electrical performance of the TFT device was improved by the insertion of a high carrier concentration layer at the channel/gate insulator and channel/electrode interfaces. It was due to the enhancement of carrier accumulation and the reduction of parasitic resistance via channel modulation. The threshold voltage was controlled at moderate value. These results indicate that the device characteristic of TFTs can be enhanced by the modulated channel structure.

Original language	English
Pages (from-to)	275-278
Number of pages	4
Journal	Thin Solid Films
Volume	537
DOIs	https://doi.org/10.1016/j.tsf.2013.04.030
Publication status	Published - 2013 Jun 30

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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10.1016/j.tsf.2013.04.030

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title = "Device characteristics of Ti-InSnO thin film transistors with modulated double and triple channel structures",

abstract = "The device characteristics of Ti-InSnO thin film transistors (TFTs) with modulated channels were investigated. The field effect mobility was enhanced to 14.9 cm2/V s in the channel-modulated TFT. The electrical performance of the TFT device was improved by the insertion of a high carrier concentration layer at the channel/gate insulator and channel/electrode interfaces. It was due to the enhancement of carrier accumulation and the reduction of parasitic resistance via channel modulation. The threshold voltage was controlled at moderate value. These results indicate that the device characteristic of TFTs can be enhanced by the modulated channel structure.",

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AU - Kim, Chang Eun

AU - Yun, Ilgu

PY - 2013/6/30

Y1 - 2013/6/30

N2 - The device characteristics of Ti-InSnO thin film transistors (TFTs) with modulated channels were investigated. The field effect mobility was enhanced to 14.9 cm2/V s in the channel-modulated TFT. The electrical performance of the TFT device was improved by the insertion of a high carrier concentration layer at the channel/gate insulator and channel/electrode interfaces. It was due to the enhancement of carrier accumulation and the reduction of parasitic resistance via channel modulation. The threshold voltage was controlled at moderate value. These results indicate that the device characteristic of TFTs can be enhanced by the modulated channel structure.

AB - The device characteristics of Ti-InSnO thin film transistors (TFTs) with modulated channels were investigated. The field effect mobility was enhanced to 14.9 cm2/V s in the channel-modulated TFT. The electrical performance of the TFT device was improved by the insertion of a high carrier concentration layer at the channel/gate insulator and channel/electrode interfaces. It was due to the enhancement of carrier accumulation and the reduction of parasitic resistance via channel modulation. The threshold voltage was controlled at moderate value. These results indicate that the device characteristic of TFTs can be enhanced by the modulated channel structure.

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VL - 537

SP - 275

EP - 278

JO - Thin Solid Films

JF - Thin Solid Films

ER -

Device characteristics of Ti-InSnO thin film transistors with modulated double and triple channel structures

Abstract

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