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Device characteristics of InSnO thin-film transistors with a modulated channel
Chang Eun Kim,
Ilgu Yun
Department of Electrical and Electronic Engineering
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peer-review
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Material Science
Thin-Film Transistor
100%
Devices
100%
Carrier Concentration
75%
Physics
Performance
50%
Insulators
25%
Electrodes
25%
Field Effect
25%
Mobility
25%