Device characteristics of InSnO thin-film transistors with a modulated channel

Chang Eun Kim; Ilgu Yun

doi:10.1088/0268-1242/27/12/125006

Device characteristics of InSnO thin-film transistors with a modulated channel

Chang Eun Kim, Ilgu Yun

Department of Electrical and Electronic Engineering

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

The device performance of channel-modulated InSnO thin-film transistors (TFTs) was investigated. The field-effect mobility in the channel-modulated TFTs with a high carrier concentration layer at the channel/gate insulator interface was enhanced due to the increased carrier concentration. The insertion of the high carrier concentration layer at the channel/electrode interface improved the device performance due to reduction of the parasitic resistance. These results indicated that the device characteristic of TFTs can be enhanced by the modulated channel structure.

Original language	English
Article number	125006
Journal	Semiconductor Science and Technology
Volume	27
Issue number	12
DOIs	https://doi.org/10.1088/0268-1242/27/12/125006
Publication status	Published - 2012 Dec

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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Cite this

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abstract = "The device performance of channel-modulated InSnO thin-film transistors (TFTs) was investigated. The field-effect mobility in the channel-modulated TFTs with a high carrier concentration layer at the channel/gate insulator interface was enhanced due to the increased carrier concentration. The insertion of the high carrier concentration layer at the channel/electrode interface improved the device performance due to reduction of the parasitic resistance. These results indicated that the device characteristic of TFTs can be enhanced by the modulated channel structure.",

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AB - The device performance of channel-modulated InSnO thin-film transistors (TFTs) was investigated. The field-effect mobility in the channel-modulated TFTs with a high carrier concentration layer at the channel/gate insulator interface was enhanced due to the increased carrier concentration. The insertion of the high carrier concentration layer at the channel/electrode interface improved the device performance due to reduction of the parasitic resistance. These results indicated that the device characteristic of TFTs can be enhanced by the modulated channel structure.

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Device characteristics of InSnO thin-film transistors with a modulated channel

Abstract

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