Abstract
The development of thin Zr film getters which are suitable for field-emission display in high vacuum microelectronics was analyzed. Ni and Pt films were used for catalysis and protection of the getter from oxidation. Getters with a Ni or Pt protection layer exhibited excellent adsorption characteristics for some impurity gases. It was also observed that the impurity gas was chemically absorbed and dissociated by Pt and Zr films the CO gas got eliminated.
| Original language | English |
|---|---|
| Pages (from-to) | 2533-2537 |
| Number of pages | 5 |
| Journal | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures |
| Volume | 22 |
| Issue number | 5 |
| DOIs | |
| Publication status | Published - 2004 Sept |
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Electrical and Electronic Engineering