Direct-patternable lanthanum substituted lead zirconate titanate (PLZT) films were prepared by sol-gel technique using orth-nitrobenzaldehyde as a photosensitive agent. PLZT films with various La concentration were formed on Pt(111)/Ti/SiO2/Si(100) substrate for direct-patterning of PLZT films and ferroelectric properties measurement. A well-defined and direct-patterned PLZT film was obtained and the improvement of leakage current density, fatigue resistance and dielectric constant with increased substitution of La in PLZT film were observed especially with 4 mol% La doped PLZT film. From this result, we confirmed that direct-patternable PLZT film is suitable for application in micro device.
|Number of pages||9|
|Publication status||Published - 2005|
|Event||16th International Symposium on Integrated Ferroelectrics, ISIF-16 - Gyeongju, Korea, Republic of|
Duration: 2004 Apr 5 → 2004 Apr 8
Bibliographical noteFunding Information:
This research has been supported by the Intelligent Microsystem Center (IMC: http://www.microsystem.re.kr), which carries out one of the 21st century’s Frontier R&D Projects sponsored by the Korea Ministry of Science and Technology.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Control and Systems Engineering
- Ceramics and Composites
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry