Development of sol-gel precursor system for direct-patternable PZT ferroelectric films containing la as a dopant

Sangwoo Bae; Jae Seob Hwang; Woo Sik Kim; Hyung Ho Park; Tae Song Kim

doi:10.1080/10584580590897326

Development of sol-gel precursor system for direct-patternable PZT ferroelectric films containing la as a dopant

Sangwoo Bae, Jae Seob Hwang, Woo Sik Kim, Hyung Ho Park, Tae Song Kim

Department of Materials Science and Engineering

Research output: Contribution to journal › Conference article › peer-review

Abstract

Direct-patternable lanthanum substituted lead zirconate titanate (PLZT) films were prepared by sol-gel technique using orth-nitrobenzaldehyde as a photosensitive agent. PLZT films with various La concentration were formed on Pt(111)/Ti/SiO₂/Si(100) substrate for direct-patterning of PLZT films and ferroelectric properties measurement. A well-defined and direct-patterned PLZT film was obtained and the improvement of leakage current density, fatigue resistance and dielectric constant with increased substitution of La in PLZT film were observed especially with 4 mol% La doped PLZT film. From this result, we confirmed that direct-patternable PLZT film is suitable for application in micro device.

Original language	English
Pages (from-to)	83-91
Number of pages	9
Journal	Integrated Ferroelectrics
Volume	69
DOIs	https://doi.org/10.1080/10584580590897326
Publication status	Published - 2005
Event	16th International Symposium on Integrated Ferroelectrics, ISIF-16 - Gyeongju, Korea, Republic of Duration: 2004 Apr 5 → 2004 Apr 8

Bibliographical note

Funding Information:
This research has been supported by the Intelligent Microsystem Center (IMC: http://www.microsystem.re.kr), which carries out one of the 21st century’s Frontier R&D Projects sponsored by the Korea Ministry of Science and Technology.

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Control and Systems Engineering
Ceramics and Composites
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1080/10584580590897326

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@article{7c7d438ef3f4439187b5602ac4168dca,

title = "Development of sol-gel precursor system for direct-patternable PZT ferroelectric films containing la as a dopant",

abstract = "Direct-patternable lanthanum substituted lead zirconate titanate (PLZT) films were prepared by sol-gel technique using orth-nitrobenzaldehyde as a photosensitive agent. PLZT films with various La concentration were formed on Pt(111)/Ti/SiO2/Si(100) substrate for direct-patterning of PLZT films and ferroelectric properties measurement. A well-defined and direct-patterned PLZT film was obtained and the improvement of leakage current density, fatigue resistance and dielectric constant with increased substitution of La in PLZT film were observed especially with 4 mol% La doped PLZT film. From this result, we confirmed that direct-patternable PLZT film is suitable for application in micro device.",

author = "Sangwoo Bae and Hwang, {Jae Seob} and Kim, {Woo Sik} and Park, {Hyung Ho} and Kim, {Tae Song}",

note = "Funding Information: This research has been supported by the Intelligent Microsystem Center (IMC: http://www.microsystem.re.kr), which carries out one of the 21st century{\textquoteright}s Frontier R&D Projects sponsored by the Korea Ministry of Science and Technology.; 16th International Symposium on Integrated Ferroelectrics, ISIF-16 ; Conference date: 05-04-2004 Through 08-04-2004",

year = "2005",

doi = "10.1080/10584580590897326",

language = "English",

volume = "69",

pages = "83--91",

journal = "Integrated Ferroelectrics",

issn = "1058-4587",

publisher = "Taylor and Francis Ltd.",

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TY - JOUR

T1 - Development of sol-gel precursor system for direct-patternable PZT ferroelectric films containing la as a dopant

AU - Bae, Sangwoo

AU - Hwang, Jae Seob

AU - Kim, Woo Sik

AU - Park, Hyung Ho

AU - Kim, Tae Song

N1 - Funding Information: This research has been supported by the Intelligent Microsystem Center (IMC: http://www.microsystem.re.kr), which carries out one of the 21st century’s Frontier R&D Projects sponsored by the Korea Ministry of Science and Technology.

PY - 2005

Y1 - 2005

N2 - Direct-patternable lanthanum substituted lead zirconate titanate (PLZT) films were prepared by sol-gel technique using orth-nitrobenzaldehyde as a photosensitive agent. PLZT films with various La concentration were formed on Pt(111)/Ti/SiO2/Si(100) substrate for direct-patterning of PLZT films and ferroelectric properties measurement. A well-defined and direct-patterned PLZT film was obtained and the improvement of leakage current density, fatigue resistance and dielectric constant with increased substitution of La in PLZT film were observed especially with 4 mol% La doped PLZT film. From this result, we confirmed that direct-patternable PLZT film is suitable for application in micro device.

AB - Direct-patternable lanthanum substituted lead zirconate titanate (PLZT) films were prepared by sol-gel technique using orth-nitrobenzaldehyde as a photosensitive agent. PLZT films with various La concentration were formed on Pt(111)/Ti/SiO2/Si(100) substrate for direct-patterning of PLZT films and ferroelectric properties measurement. A well-defined and direct-patterned PLZT film was obtained and the improvement of leakage current density, fatigue resistance and dielectric constant with increased substitution of La in PLZT film were observed especially with 4 mol% La doped PLZT film. From this result, we confirmed that direct-patternable PLZT film is suitable for application in micro device.

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UR - http://www.scopus.com/inward/citedby.url?scp=33644773509&partnerID=8YFLogxK

U2 - 10.1080/10584580590897326

DO - 10.1080/10584580590897326

M3 - Conference article

AN - SCOPUS:33644773509

SN - 1058-4587

VL - 69

SP - 83

EP - 91

JO - Integrated Ferroelectrics

JF - Integrated Ferroelectrics

T2 - 16th International Symposium on Integrated Ferroelectrics, ISIF-16

Y2 - 5 April 2004 through 8 April 2004

ER -

Development of sol-gel precursor system for direct-patternable PZT ferroelectric films containing la as a dopant

Abstract

Bibliographical note

All Science Journal Classification (ASJC) codes

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