TIT capacitor with Nano-mixed HfxAlyOz dielectric was successfully demonstrated to be applicable to 65nm DRAM devices. Nano-mixed HfxAlyOz thin film by ALD(Atomic Layer Deposition) showed an excellent thermal stability even up to 700°C without any leakage current degradation. Moreover, Nano-mixed films revealed lower leakage current than laminate due to effective nano-scale mixing of HfO2 and Al2O3. TiN/HfxAlyOz/TiN capacitor turned out to be applicable to 65nm DRAM showing low EOT of 11Å and low leakage of IfA/cell.
|Number of pages
|Digest of Technical Papers - Symposium on VLSI Technology
|Published - 2004
|2004 Symposium on VLSI Technology - Digest of Technical Papers - Honolulu, HI, United States
Duration: 2004 Jun 15 → 2004 Jun 17
All Science Journal Classification (ASJC) codes
- Electrical and Electronic Engineering