Deterministic assembly of releasable single crystal silicon-metal oxide field-effect devices formed from bulk wafers

Tae Il Kim; Yei Hwan Jung; Hyun Joong Chung; Ki Jun Yu; Numair Ahmed; Christopher J. Corcoran; Jae Suk Park; Sung Hun Jin; John A. Rogers

doi:10.1063/1.4804139

Deterministic assembly of releasable single crystal silicon-metal oxide field-effect devices formed from bulk wafers

Tae Il Kim, Yei Hwan Jung, Hyun Joong Chung, Ki Jun Yu, Numair Ahmed, Christopher J. Corcoran, Jae Suk Park, Sung Hun Jin, John A. Rogers

Department of Electrical and Electronic Engineering

Research output: Contribution to journal › Article › peer-review

33 Citations (Scopus)

Abstract

Deterministic assembly of ultrathin metal oxide-semiconductor field-effect transistors released from the surfaces of bulk wafers with (111) orientation provides a route to high quality electronics on nearly any type of substrate. Device parameters and bias stability characteristics from transistors on sheets of plastic confirm the effectiveness of the approach and the critical roles of thermally grown layers of silicon dioxide for the gate dielectrics and passivation layers. Systematic studies of the anisotropic etching processes used to release the devices illustrate capabilities into the sub-micron thickness regime, with beneficial effects on the bending stiffness and degree of bendability.

Original language	English
Article number	182104
Journal	Applied Physics Letters
Volume	102
Issue number	18
DOIs	https://doi.org/10.1063/1.4804139
Publication status	Published - 2013 May 6

Bibliographical note

Funding Information:
This work was supported by a National Security Science and Engineering Faculty Fellowship (JAR), a grant from the US Department of Energy, Division of Materials Sciences under Award No. DEFG02-91ER45439 (JAR), Basic Science Research Program through the National Research Foundation of Korea Grant funded by the Ministry of Science, ICT & Future Planning (2009-0083540)(TK). HJC also acknowledges the start-up support by the University of Alberta. The experiments used facilities at the Materials Research Laboratory and Center for Microanalysis of Materials at the University of Illinois at Urbana-Champaign, supported by the US Department of Energy, Division of Materials Sciences under Award No. DE-FG02-07ER46471 (JAR) and DEFG02-07ER46453 (JAR).

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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abstract = "Deterministic assembly of ultrathin metal oxide-semiconductor field-effect transistors released from the surfaces of bulk wafers with (111) orientation provides a route to high quality electronics on nearly any type of substrate. Device parameters and bias stability characteristics from transistors on sheets of plastic confirm the effectiveness of the approach and the critical roles of thermally grown layers of silicon dioxide for the gate dielectrics and passivation layers. Systematic studies of the anisotropic etching processes used to release the devices illustrate capabilities into the sub-micron thickness regime, with beneficial effects on the bending stiffness and degree of bendability.",

author = "Kim, {Tae Il} and {Hwan Jung}, Yei and Chung, {Hyun Joong} and {Jun Yu}, Ki and Numair Ahmed and Corcoran, {Christopher J.} and {Suk Park}, Jae and {Hun Jin}, Sung and Rogers, {John A.}",

note = "Funding Information: This work was supported by a National Security Science and Engineering Faculty Fellowship (JAR), a grant from the US Department of Energy, Division of Materials Sciences under Award No. DEFG02-91ER45439 (JAR), Basic Science Research Program through the National Research Foundation of Korea Grant funded by the Ministry of Science, ICT & Future Planning (2009-0083540)(TK). HJC also acknowledges the start-up support by the University of Alberta. The experiments used facilities at the Materials Research Laboratory and Center for Microanalysis of Materials at the University of Illinois at Urbana-Champaign, supported by the US Department of Energy, Division of Materials Sciences under Award No. DE-FG02-07ER46471 (JAR) and DEFG02-07ER46453 (JAR).",

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AU - Kim, Tae Il

AU - Hwan Jung, Yei

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AU - Jun Yu, Ki

AU - Ahmed, Numair

AU - Corcoran, Christopher J.

AU - Suk Park, Jae

AU - Hun Jin, Sung

AU - Rogers, John A.

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Deterministic assembly of releasable single crystal silicon-metal oxide field-effect devices formed from bulk wafers

Abstract

Bibliographical note

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