We report that the optimum pentacene channel thickness is dependent on the surface energy state of its dielectric substrate. Pentacene thin-film transistor (TFT) with hydrophobic substrate displays a peak linear mobility at an optimum channel thickness of 50 nm, below or above which the linear mobility decreases. In contrast, the linear mobility of the TFT with hydrophilic substrate monotonically increases until the channel thickness decreases to 15 nm. According to atomic force microscopy of 15-nm -thin pentacene grown on the Si O2 and poly-4-vinyphenol (PVP) dielectrics, the pentacene islands on PVP are not perfectly interconnected unlike the case on Si O2.
|Journal||Applied Physics Letters|
|Publication status||Published - 2008|
Bibliographical noteFunding Information:
The authors acknowledge the financial support from Brain Korea 21 Project and a grant of Information Display R&D center, one of the 21st Century Frontier R&D Program funded by the Ministry of Knowledge Economy of Korean government.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)