Determining the optimum pentacene channel thickness on hydrophobic and hydrophilic dielectric surface

Sung Jin Mun; Jeong M. Choi; Kwang H. Lee; Kimoon Lee; Seongil Im

doi:10.1063/1.3041634

Determining the optimum pentacene channel thickness on hydrophobic and hydrophilic dielectric surface

Sung Jin Mun, Jeong M. Choi, Kwang H. Lee, Kimoon Lee, Seongil Im

Department of Physics

Research output: Contribution to journal › Article › peer-review

11 Citations (Scopus)

Abstract

We report that the optimum pentacene channel thickness is dependent on the surface energy state of its dielectric substrate. Pentacene thin-film transistor (TFT) with hydrophobic substrate displays a peak linear mobility at an optimum channel thickness of 50 nm, below or above which the linear mobility decreases. In contrast, the linear mobility of the TFT with hydrophilic substrate monotonically increases until the channel thickness decreases to 15 nm. According to atomic force microscopy of 15-nm -thin pentacene grown on the Si O2 and poly-4-vinyphenol (PVP) dielectrics, the pentacene islands on PVP are not perfectly interconnected unlike the case on Si O2.

Original language	English
Article number	233301
Journal	Applied Physics Letters
Volume	93
Issue number	23
DOIs	https://doi.org/10.1063/1.3041634
Publication status	Published - 2008

Bibliographical note

Funding Information:
The authors acknowledge the financial support from Brain Korea 21 Project and a grant of Information Display R&D center, one of the 21st Century Frontier R&D Program funded by the Ministry of Knowledge Economy of Korean government.

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.3041634

Cite this

@article{065719d9d2e5443a90a7bdc890fb66ae,

title = "Determining the optimum pentacene channel thickness on hydrophobic and hydrophilic dielectric surface",

abstract = "We report that the optimum pentacene channel thickness is dependent on the surface energy state of its dielectric substrate. Pentacene thin-film transistor (TFT) with hydrophobic substrate displays a peak linear mobility at an optimum channel thickness of 50 nm, below or above which the linear mobility decreases. In contrast, the linear mobility of the TFT with hydrophilic substrate monotonically increases until the channel thickness decreases to 15 nm. According to atomic force microscopy of 15-nm -thin pentacene grown on the Si O2 and poly-4-vinyphenol (PVP) dielectrics, the pentacene islands on PVP are not perfectly interconnected unlike the case on Si O2.",

author = "Mun, {Sung Jin} and Choi, {Jeong M.} and Lee, {Kwang H.} and Kimoon Lee and Seongil Im",

note = "Funding Information: The authors acknowledge the financial support from Brain Korea 21 Project and a grant of Information Display R&D center, one of the 21st Century Frontier R&D Program funded by the Ministry of Knowledge Economy of Korean government. ",

year = "2008",

doi = "10.1063/1.3041634",

language = "English",

volume = "93",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "23",

}

TY - JOUR

T1 - Determining the optimum pentacene channel thickness on hydrophobic and hydrophilic dielectric surface

AU - Mun, Sung Jin

AU - Choi, Jeong M.

AU - Lee, Kwang H.

AU - Lee, Kimoon

AU - Im, Seongil

N1 - Funding Information: The authors acknowledge the financial support from Brain Korea 21 Project and a grant of Information Display R&D center, one of the 21st Century Frontier R&D Program funded by the Ministry of Knowledge Economy of Korean government.

PY - 2008

Y1 - 2008

N2 - We report that the optimum pentacene channel thickness is dependent on the surface energy state of its dielectric substrate. Pentacene thin-film transistor (TFT) with hydrophobic substrate displays a peak linear mobility at an optimum channel thickness of 50 nm, below or above which the linear mobility decreases. In contrast, the linear mobility of the TFT with hydrophilic substrate monotonically increases until the channel thickness decreases to 15 nm. According to atomic force microscopy of 15-nm -thin pentacene grown on the Si O2 and poly-4-vinyphenol (PVP) dielectrics, the pentacene islands on PVP are not perfectly interconnected unlike the case on Si O2.

AB - We report that the optimum pentacene channel thickness is dependent on the surface energy state of its dielectric substrate. Pentacene thin-film transistor (TFT) with hydrophobic substrate displays a peak linear mobility at an optimum channel thickness of 50 nm, below or above which the linear mobility decreases. In contrast, the linear mobility of the TFT with hydrophilic substrate monotonically increases until the channel thickness decreases to 15 nm. According to atomic force microscopy of 15-nm -thin pentacene grown on the Si O2 and poly-4-vinyphenol (PVP) dielectrics, the pentacene islands on PVP are not perfectly interconnected unlike the case on Si O2.

UR - http://www.scopus.com/inward/record.url?scp=57649113477&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=57649113477&partnerID=8YFLogxK

U2 - 10.1063/1.3041634

DO - 10.1063/1.3041634

M3 - Article

AN - SCOPUS:57649113477

SN - 0003-6951

VL - 93

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 23

M1 - 233301

ER -

Determining the optimum pentacene channel thickness on hydrophobic and hydrophilic dielectric surface

Abstract

Bibliographical note

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this