Determination of the Poisson ratio of (001) and (111) oriented thin films of In 2O 3 by synchrotron-based x-ray diffraction

K. H.L. Zhang; A. Regoutz; R. G. Palgrave; D. J. Payne; R. G. Egdell; A. Walsh; S. P. Collins; D. Wermeille; R. A. Cowley

doi:10.1103/PhysRevB.84.233301

Determination of the Poisson ratio of (001) and (111) oriented thin films of In ₂O ₃ by synchrotron-based x-ray diffraction

K. H.L. Zhang, A. Regoutz, R. G. Palgrave, D. J. Payne, R. G. Egdell, A. Walsh, S. P. Collins, D. Wermeille, R. A. Cowley

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

19 Citations (Scopus)

Abstract

The Poisson ratio ν of In ₂O ₃ has been determined by measurement of the covariation of in-plane and out-of-plane lattice parameters of strained thin films grown epitaxially on (111) and (001) oriented cubic Y-stabilized ZrO ₂ substrates. The experimental results are in good agreement with values for ν calculated using atomistic simulation procedures.

Original language	English
Article number	233301
Journal	Physical Review B - Condensed Matter and Materials Physics
Volume	84
Issue number	23
DOIs	https://doi.org/10.1103/PhysRevB.84.233301
Publication status	Published - 2011 Dec 1

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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10.1103/PhysRevB.84.233301

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Zhang, K. H. L., Regoutz, A., Palgrave, R. G., Payne, D. J., Egdell, R. G., Walsh, A., Collins, S. P., Wermeille, D., & Cowley, R. A. (2011). Determination of the Poisson ratio of (001) and (111) oriented thin films of In ₂O ₃ by synchrotron-based x-ray diffraction. Physical Review B - Condensed Matter and Materials Physics, 84(23), [233301]. https://doi.org/10.1103/PhysRevB.84.233301

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abstract = "The Poisson ratio ν of In 2O 3 has been determined by measurement of the covariation of in-plane and out-of-plane lattice parameters of strained thin films grown epitaxially on (111) and (001) oriented cubic Y-stabilized ZrO 2 substrates. The experimental results are in good agreement with values for ν calculated using atomistic simulation procedures.",

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doi = "10.1103/PhysRevB.84.233301",

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Zhang, KHL, Regoutz, A, Palgrave, RG, Payne, DJ, Egdell, RG, Walsh, A, Collins, SP, Wermeille, D & Cowley, RA 2011, 'Determination of the Poisson ratio of (001) and (111) oriented thin films of In ₂O ₃ by synchrotron-based x-ray diffraction', Physical Review B - Condensed Matter and Materials Physics, vol. 84, no. 23, 233301. https://doi.org/10.1103/PhysRevB.84.233301

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T1 - Determination of the Poisson ratio of (001) and (111) oriented thin films of In 2O 3 by synchrotron-based x-ray diffraction

AU - Zhang, K. H.L.

AU - Regoutz, A.

AU - Palgrave, R. G.

AU - Payne, D. J.

AU - Egdell, R. G.

AU - Walsh, A.

AU - Collins, S. P.

AU - Wermeille, D.

AU - Cowley, R. A.

PY - 2011/12/1

Y1 - 2011/12/1

N2 - The Poisson ratio ν of In 2O 3 has been determined by measurement of the covariation of in-plane and out-of-plane lattice parameters of strained thin films grown epitaxially on (111) and (001) oriented cubic Y-stabilized ZrO 2 substrates. The experimental results are in good agreement with values for ν calculated using atomistic simulation procedures.

AB - The Poisson ratio ν of In 2O 3 has been determined by measurement of the covariation of in-plane and out-of-plane lattice parameters of strained thin films grown epitaxially on (111) and (001) oriented cubic Y-stabilized ZrO 2 substrates. The experimental results are in good agreement with values for ν calculated using atomistic simulation procedures.

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Determination of the Poisson ratio of (001) and (111) oriented thin films of In ₂O ₃ by synchrotron-based x-ray diffraction

Abstract

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