Abstract
The bonding configuration and structural evolution of Si-incorporated amorphous carbon (a-C:Six) films were studied. The incorporation of Si to amorphous carbon (a-C) has the advantageous effect of promoting sp3 hybridized bond formation and improving the thermal stability. The composition, bonding configuration, structure and electrical properties of a-C:Six were investigated as a function of Si concentration. For Si concentration below 10 at.%, incorporated Si substituted for sp2 C-bonded clusters and the electrical resistivity of a-C:Six increased significantly. From 10 to 23 at.%, the fraction of sp3 bonds and the residual stress increased with Si concentration. However, when increasing Si concentration above 23 at.%, it is observed that the contribution of Si-4C bonds increased and residual stress and resistivity of a-C:Six decreased. From the above results, different structural and bonding characteristics of a-C:Six were established and this transition of structural evolution is closely related to the incorporated Si content in film.
| Original language | English |
|---|---|
| Pages (from-to) | 1373-1377 |
| Number of pages | 5 |
| Journal | Diamond and Related Materials |
| Volume | 12 |
| Issue number | 8 |
| DOIs | |
| Publication status | Published - 2003 Aug |
Bibliographical note
Funding Information:The authors are indebted to Churl Seung Lee and Dr Kwang-Ryeol Lee from the DLC Laboratory of KIST for access to facilities. Partial support from the Brain Korea 21 project by the Ministry of Education and Human Resources Development is greatly appreciated.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Chemistry(all)
- Mechanical Engineering
- Materials Chemistry
- Electrical and Electronic Engineering