Design of InZnSnO Semiconductor Alloys Synthesized by Supercycle Atomic Layer Deposition and Their Rollable Applications

Jiazhen Sheng, Taehyun Hong, Donghee Kang, Yeonjin Yi, Jun Hyung Lim, Jin Seong Park

Research output: Contribution to journalArticlepeer-review

38 Citations (Scopus)


Amorphous InGaZnO semiconductors have been rapidly developed as active charge-transport materials in thin film transistors (TFTs) because of their cost effectiveness, flexibility, and homogeneous characteristics for large-area applications. Recently, InZnSnO (IZTO) with superior mobility (higher than 20 cm 2 V -1 s -1 ) has been suggested as a promising oxide semiconductor material for high-resolution, large-area displays. However, the electrical and physical characteristics of IZTO have not been fully characterized. In this study, thin IZTO films were grown using a novel atomic layer deposition (ALD) supercycle process consisting of alternating subcycles of single-oxide deposition. By varying the number of deposition subcycles, it was determined that the insertion of a Sn-O cycle improved the mobility and reliability of IZTO-based TFTs. Specifically, the IZTO TFT obtained using one In-O cycle, one Zn-O cycle, and one Sn-O exhibited the best performance (saturation mobility of 27.8 cm 2 V -1 s -1 and threshold voltage shift of 1.8 V after applying positive-bias temperature stress conditions). Next, the production of rollable and flexible devices was demonstrated by fabricating ALD-processed IZTO TFTs on polymer substrates. The electrical characteristics of these TFTs were retained without drastic degradation for 240,000 bending cycles. These results indicate that the supercycle ALD technique is effective for synthesizing multicomponent oxide TFTs for electronic applications requiring high mobility and mechanical flexibility.

Original languageEnglish
Pages (from-to)12683-12692
Number of pages10
JournalACS Applied Materials and Interfaces
Issue number13
Publication statusPublished - 2019 Apr 3

Bibliographical note

Funding Information:
This research was supported by Samsung Display Co., Ltd.

Publisher Copyright:
Copyright © 2019 American Chemical Society.

All Science Journal Classification (ASJC) codes

  • Materials Science(all)


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