Design of a high positioning contact probe for plasmonic lithography

Jinhee Jang, Yongwoo Kim, Seok Kim, Howon Jung, Jae W. Hahn

Research output: Chapter in Book/Report/Conference proceedingConference contribution


We suggest a geometrically modified probe to achieve high positioning accuracy for plasmonic lithography which can record nanometer scale features and has high throughput. Instead of a cantilever probe, we propose a circular probe which has arc-shaped arms that hold the tip at the center. The modified probe is based on the fixed-fixed beam in material mechanics. To calculate the tip displacement, we used a finite element method (FEM) for a circular probe and compared the results with cantilever probe. We considered a silicon-based micro-fabrication process to design the probe. The probe has a square outline boundary with a length of 50μm, four arms, and a pyramidal tip with a height of 5μm. The ratio of the lateral tip displacement to the vertical deflection was evaluated to indicate the positioning accuracy. The probe has higher accuracy by a factor of 103 and 10 in approach mode and scan mode, respectively, compared to a cantilever probe. We expect that a circular probe is appropriate for the applications that require high positioning accuracy, such as nanolithography with a contact probe and multiple-probe arrays.

Original languageEnglish
Title of host publicationAlternative Lithographic Technologies IV
ISBN (Print)9780819489791
Publication statusPublished - 2012
EventAlternative Lithographic Technologies IV - San Jose, CA, United States
Duration: 2012 Feb 132012 Feb 16

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
ISSN (Print)0277-786X
ISSN (Electronic)1996-756X


OtherAlternative Lithographic Technologies IV
Country/TerritoryUnited States
CitySan Jose, CA

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering


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