A new self-aligned asymmetric structure (SAAS) is proposed for deep sub-micrometer MOSFET and its device characteristics are analyzed. The proposed structure enables the source, drain and channel to be designed independently without additional lithography steps. SAAS with lateral asymmetric channel and highly doped source extension improves driving capability and short channel behavior without sacrificing hot carrier reliability. Based on the results of hydrodynamic device simulation over a wide range of process conditions, it is shown that highly doped asymmetric halo provides enhanced velocity overshoot and suppressed drain-induced barrier lowering. By employing asymmetric highly doped source extension, the degradation of driving capability is suppressed that can be caused by the increased parasitic resistance in highly doped asymmetric halo.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Materials Chemistry
- Electrical and Electronic Engineering