Deposition of dielectric thin films by atomic layer epitaxy and their application for electroluminescence displays

Dong Heon Lee; Yong Soo Cho; Kook Jeon Lee; Hyung Jin Jung

doi:10.1557/proc-310-397

Deposition of dielectric thin films by atomic layer epitaxy and their application for electroluminescence displays

Dong Heon Lee, Yong Soo Cho, Kook Jeon Lee, Hyung Jin Jung

Department of Materials Science and Engineering

Research output: Contribution to journal › Conference article › peer-review

Abstract

Various dielectric thin films have been studied for electroluminescence display (ELD) application to improve dielectric constant and breakdown voltage. In this work, amorphous BaTiO₃ thin films were deposited on indium tin oxide (ITO)- coated glass substrates by atomic layer epitaxy (ALE) using metalorganic precursors. Influences of deposition conditions on microstructure, interface characteristics and dielectric properties are investigated. It was possible to obtain dielectric films with good dielectric properties and textured, flat surface microstructure without defects due to the improvement of qualities of the grown films. These results were examined by XRD, SEM and AES analysis.

Original language	English
Pages (from-to)	397-402
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	310
DOIs	https://doi.org/10.1557/proc-310-397
Publication status	Published - 1993
Event	Proceedings of the 1993 Spring Meeting of the Materials Research Society - San Francisco, CA, USA Duration: 1993 Apr 16 → 1993 Apr 20

All Science Journal Classification (ASJC) codes

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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title = "Deposition of dielectric thin films by atomic layer epitaxy and their application for electroluminescence displays",

abstract = "Various dielectric thin films have been studied for electroluminescence display (ELD) application to improve dielectric constant and breakdown voltage. In this work, amorphous BaTiO3 thin films were deposited on indium tin oxide (ITO)- coated glass substrates by atomic layer epitaxy (ALE) using metalorganic precursors. Influences of deposition conditions on microstructure, interface characteristics and dielectric properties are investigated. It was possible to obtain dielectric films with good dielectric properties and textured, flat surface microstructure without defects due to the improvement of qualities of the grown films. These results were examined by XRD, SEM and AES analysis.",

author = "Lee, {Dong Heon} and Cho, {Yong Soo} and Lee, {Kook Jeon} and Jung, {Hyung Jin}",

year = "1993",

doi = "10.1557/proc-310-397",

language = "English",

volume = "310",

pages = "397--402",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "Proceedings of the 1993 Spring Meeting of the Materials Research Society ; Conference date: 16-04-1993 Through 20-04-1993",

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TY - JOUR

T1 - Deposition of dielectric thin films by atomic layer epitaxy and their application for electroluminescence displays

AU - Lee, Dong Heon

AU - Cho, Yong Soo

AU - Lee, Kook Jeon

AU - Jung, Hyung Jin

PY - 1993

Y1 - 1993

N2 - Various dielectric thin films have been studied for electroluminescence display (ELD) application to improve dielectric constant and breakdown voltage. In this work, amorphous BaTiO3 thin films were deposited on indium tin oxide (ITO)- coated glass substrates by atomic layer epitaxy (ALE) using metalorganic precursors. Influences of deposition conditions on microstructure, interface characteristics and dielectric properties are investigated. It was possible to obtain dielectric films with good dielectric properties and textured, flat surface microstructure without defects due to the improvement of qualities of the grown films. These results were examined by XRD, SEM and AES analysis.

AB - Various dielectric thin films have been studied for electroluminescence display (ELD) application to improve dielectric constant and breakdown voltage. In this work, amorphous BaTiO3 thin films were deposited on indium tin oxide (ITO)- coated glass substrates by atomic layer epitaxy (ALE) using metalorganic precursors. Influences of deposition conditions on microstructure, interface characteristics and dielectric properties are investigated. It was possible to obtain dielectric films with good dielectric properties and textured, flat surface microstructure without defects due to the improvement of qualities of the grown films. These results were examined by XRD, SEM and AES analysis.

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U2 - 10.1557/proc-310-397

DO - 10.1557/proc-310-397

M3 - Conference article

AN - SCOPUS:0027810525

SN - 0272-9172

VL - 310

SP - 397

EP - 402

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Proceedings of the 1993 Spring Meeting of the Materials Research Society

Y2 - 16 April 1993 through 20 April 1993

ER -

Deposition of dielectric thin films by atomic layer epitaxy and their application for electroluminescence displays

Abstract

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