Dependence of reverse bias leakage on depletion width and V-pit size in InGaN/GaN light-emitting diodes grown on silicon

Hyun Kum, Mihyun Kim, Dong Gun Lee, Youngjo Tak, Jongsun Maeng, Joosung Kim, Gilho Gu, Joong Jung Kim, Yongil Kim, Jun Youn Kim, Youngsoo Park

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)

Abstract

The reverse bias leakage characteristics of InGaN/GaN light emitting diodes (LEDs) grown on Si (111) were investigated as a function of two factors: (1) bulk depletion width and (2) V-pit size. The reverse leakage current showed a decreasing trend with an increase in V-pit size, given a fixed depletion width. Atomic probe tomography was used to verify that a reduction in electric field near the vicinity of threading dislocations suppresses field-assisted carrier emission, reducing reverse leakage. Calculations using the appropriate theory show a reasonable agreement with the experimental results. These findings further elucidate the role of V-pits as passivation for reverse leakage paths and may be useful for not only LEDs but GaN-based power devices as well.

Original languageEnglish
Article number060602
JournalJournal of Vacuum Science and Technology B: Nanotechnology and Microelectronics
Volume33
Issue number6
DOIs
Publication statusPublished - 2015 Nov 1

Bibliographical note

Publisher Copyright:
© 2015 American Vacuum Society.

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Instrumentation
  • Process Chemistry and Technology
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering
  • Materials Chemistry

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