Density of trap states measured by photon probe into ZnO based thin-film transistors

Kimoon Lee, Gunwoo Ko, Gun Hwan Lee, Gi Bok Han, Myung M. Sung, Tae Woo Ha, Jae Hoon Kim, Seongil Im

Research output: Contribution to journalArticlepeer-review

29 Citations (Scopus)


We report on photo-excited trap-charge-collection spectroscopy, contrived to measure the density of deep-level traps near channel/dielectric interface in a working ZnO based thin-film transistor as a function of photon probe energy. Free charges trapped at a certain energy level are liberated by the correspondingly energetic photons and then electrically collected at the source/drain electrodes. During this photo-electric process, the threshold voltage of TFT shifts and its magnitude provides the density-of-state information of charge traps. In the present work, we directly characterized the density-of-state of ZnO based thin-film transistors with polymer-oxide double dielectrics after evaluating their gate stabilities.

Original languageEnglish
Article number082110
JournalApplied Physics Letters
Issue number8
Publication statusPublished - 2010 Aug 23

Bibliographical note

Funding Information:
Authors acknowledge the financial support from NRF (NRL program: Grant No. 2009-8-0403) and Brain Korea 21 Program.

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)


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