Density of trap states measured by photon probe into ZnO based thin-film transistors

Kimoon Lee; Gunwoo Ko; Gun Hwan Lee; Gi Bok Han; Myung M. Sung; Tae Woo Ha; Jae Hoon Kim; Seongil Im

doi:10.1063/1.3483763

Density of trap states measured by photon probe into ZnO based thin-film transistors

Kimoon Lee, Gunwoo Ko, Gun Hwan Lee, Gi Bok Han, Myung M. Sung, Tae Woo Ha, Jae Hoon Kim, Seongil Im

Department of Physics

Research output: Contribution to journal › Article › peer-review

29 Citations (Scopus)

Abstract

We report on photo-excited trap-charge-collection spectroscopy, contrived to measure the density of deep-level traps near channel/dielectric interface in a working ZnO based thin-film transistor as a function of photon probe energy. Free charges trapped at a certain energy level are liberated by the correspondingly energetic photons and then electrically collected at the source/drain electrodes. During this photo-electric process, the threshold voltage of TFT shifts and its magnitude provides the density-of-state information of charge traps. In the present work, we directly characterized the density-of-state of ZnO based thin-film transistors with polymer-oxide double dielectrics after evaluating their gate stabilities.

Original language	English
Article number	082110
Journal	Applied Physics Letters
Volume	97
Issue number	8
DOIs	https://doi.org/10.1063/1.3483763
Publication status	Published - 2010 Aug 23

Bibliographical note

Funding Information:
Authors acknowledge the financial support from NRF (NRL program: Grant No. 2009-8-0403) and Brain Korea 21 Program.

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.3483763

Cite this

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abstract = "We report on photo-excited trap-charge-collection spectroscopy, contrived to measure the density of deep-level traps near channel/dielectric interface in a working ZnO based thin-film transistor as a function of photon probe energy. Free charges trapped at a certain energy level are liberated by the correspondingly energetic photons and then electrically collected at the source/drain electrodes. During this photo-electric process, the threshold voltage of TFT shifts and its magnitude provides the density-of-state information of charge traps. In the present work, we directly characterized the density-of-state of ZnO based thin-film transistors with polymer-oxide double dielectrics after evaluating their gate stabilities.",

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AU - Ko, Gunwoo

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AU - Ha, Tae Woo

AU - Kim, Jae Hoon

AU - Im, Seongil

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Density of trap states measured by photon probe into ZnO based thin-film transistors

Abstract

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