Density of state effective mass and related charge transport properties in K-doped BiCuOSe

Dong Sun Lee; Tae Ho An; Mahn Jeong; Hyoung Seuk Choi; Young Soo Lim; Won Seon Seo; Cheol Hee Park; Chan Park; Hyung Ho Park

doi:10.1063/1.4837475

Density of state effective mass and related charge transport properties in K-doped BiCuOSe

Dong Sun Lee, Tae Ho An, Mahn Jeong, Hyoung Seuk Choi, Young Soo Lim, Won Seon Seo, Cheol Hee Park, Chan Park, Hyung Ho Park

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

77 Citations (Scopus)

Abstract

We report the enhanced p-type conduction properties in BiCuOSe by doping of monovalent ions (K⁺). As compared with undoped BiCuOSe, simultaneous increase in both the carrier concentration and the Hall mobility was achieved in the K-doped BiCuOSe. The origin of the enhancement was discussed in terms of the two-band structure in the valence band of the BiCuOSe, and the density of state effective masses of the heavy (∼1.1 m_e) and light hole (∼0.18 m_e) were estimated by using Pisarenko relation.

Original language	English
Article number	232110
Journal	Applied Physics Letters
Volume	103
Issue number	23
DOIs	https://doi.org/10.1063/1.4837475
Publication status	Published - 2013 Dec 2

Bibliographical note

Funding Information:
This research was supported by Nano·Material Technology Development Program (No. 2011-0030147) through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology and also supported by the Dual Use Technology Program (No. 12-DU-MP-01) of the Agency for Defense Development, Republic of Korea.

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.4837475

Cite this

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title = "Density of state effective mass and related charge transport properties in K-doped BiCuOSe",

abstract = "We report the enhanced p-type conduction properties in BiCuOSe by doping of monovalent ions (K+). As compared with undoped BiCuOSe, simultaneous increase in both the carrier concentration and the Hall mobility was achieved in the K-doped BiCuOSe. The origin of the enhancement was discussed in terms of the two-band structure in the valence band of the BiCuOSe, and the density of state effective masses of the heavy (∼1.1 me) and light hole (∼0.18 me) were estimated by using Pisarenko relation.",

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note = "Funding Information: This research was supported by Nano·Material Technology Development Program (No. 2011-0030147) through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology and also supported by the Dual Use Technology Program (No. 12-DU-MP-01) of the Agency for Defense Development, Republic of Korea.",

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AU - Sun Lee, Dong

AU - An, Tae Ho

AU - Jeong, Mahn

AU - Choi, Hyoung Seuk

AU - Soo Lim, Young

AU - Seo, Won Seon

AU - Park, Cheol Hee

AU - Park, Chan

AU - Park, Hyung Ho

N1 - Funding Information: This research was supported by Nano·Material Technology Development Program (No. 2011-0030147) through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology and also supported by the Dual Use Technology Program (No. 12-DU-MP-01) of the Agency for Defense Development, Republic of Korea.

PY - 2013/12/2

Y1 - 2013/12/2

N2 - We report the enhanced p-type conduction properties in BiCuOSe by doping of monovalent ions (K+). As compared with undoped BiCuOSe, simultaneous increase in both the carrier concentration and the Hall mobility was achieved in the K-doped BiCuOSe. The origin of the enhancement was discussed in terms of the two-band structure in the valence band of the BiCuOSe, and the density of state effective masses of the heavy (∼1.1 me) and light hole (∼0.18 me) were estimated by using Pisarenko relation.

AB - We report the enhanced p-type conduction properties in BiCuOSe by doping of monovalent ions (K+). As compared with undoped BiCuOSe, simultaneous increase in both the carrier concentration and the Hall mobility was achieved in the K-doped BiCuOSe. The origin of the enhancement was discussed in terms of the two-band structure in the valence band of the BiCuOSe, and the density of state effective masses of the heavy (∼1.1 me) and light hole (∼0.18 me) were estimated by using Pisarenko relation.

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Density of state effective mass and related charge transport properties in K-doped BiCuOSe

Abstract

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