Degradation of nitride/W/WNx/poly-Si gate stack by post-thermal processes

Heung Jae Cho, Se Aug Jang, Yong Soo Kim, Kwan Yong Lim, Jae Geun Oh, Jung Ho Lee, Tae Su Park, Tae Sun Back, Jun Mo Yang, Hong Seon Yang, Hyun Chul Sohn, Jin Woong Kim

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)


We investigated the effect of post-thermal processing on the gate oxide reliability in nitride/W/WNx/polycrystalline-Si (poly-Si) gated metal-oxide-semiconductor (MOS) capacitors. As the thermal processing became severer, grater development of mechanical stress and degradation of the gate oxide were observed. Microvoids were also found at the triple point between the gate oxide and two poly-Si grains. The wide variation in mechanical stress during post-thermal processing is believed to create the microvoids and generate additional dangling and strained bonds in the oxide and at the SiO 2/Si interface, resulting in the degradation of the gate oxide.

Original languageEnglish
Pages (from-to)2221-2224
Number of pages4
JournalJapanese Journal of Applied Physics
Issue number4 B
Publication statusPublished - 2005 Apr

All Science Journal Classification (ASJC) codes

  • General Engineering
  • General Physics and Astronomy


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