Defect analyses of selective epitaxial grown GaAs on STI patterned (0 0 1) Si substrates

S. W. Kim; Y. D. Cho; C. S. Shin; W. K. Park; D. H. Kim; D. H. Ko

doi:10.1016/j.jcrysgro.2014.01.027

Defect analyses of selective epitaxial grown GaAs on STI patterned (0 0 1) Si substrates

S. W. Kim, Y. D. Cho, C. S. Shin, W. K. Park, D. H. Kim, D. H. Ko

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

The defects of GaAs layers grown on Si (001) substrate with patterned SiO₂structures were investigated using transmission electron microscopy. The compressive strain along the 〈110〉 direction was induced in selectively grown GaAs epilayers.The defects such as stacking faults or microtwins were trapped near the GaAs/Si interface, over which defect free GaAs regions were formed from the middle of trench walls. It is suggested that the residual compressive strain in defect free GaAs layers is due to the patterned SiO₂structures.

Original language	English
Pages (from-to)	319-322
Number of pages	4
Journal	Journal of Crystal Growth
Volume	401
DOIs	https://doi.org/10.1016/j.jcrysgro.2014.01.027
Publication status	Published - 2014 Sept 1

Bibliographical note

Funding Information:
This work was financially supported by the “ R&D Program for Industrial Core Technology funded by the Ministry of Trade, Industry and Energy (MOTIE), Republic of Korea (Grant no. 10045216 )”. The authors thank SEMATECH for assistance with STI patterned wafer preparation.

Publisher Copyright:
© 2014 Elsevier B.V.

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

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10.1016/j.jcrysgro.2014.01.027

Cite this

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title = "Defect analyses of selective epitaxial grown GaAs on STI patterned (0 0 1) Si substrates",

abstract = "The defects of GaAs layers grown on Si (001) substrate with patterned SiO2structures were investigated using transmission electron microscopy. The compressive strain along the 〈110〉 direction was induced in selectively grown GaAs epilayers.The defects such as stacking faults or microtwins were trapped near the GaAs/Si interface, over which defect free GaAs regions were formed from the middle of trench walls. It is suggested that the residual compressive strain in defect free GaAs layers is due to the patterned SiO2structures.",

author = "Kim, {S. W.} and Cho, {Y. D.} and Shin, {C. S.} and Park, {W. K.} and Kim, {D. H.} and Ko, {D. H.}",

note = "Funding Information: This work was financially supported by the “ R&D Program for Industrial Core Technology funded by the Ministry of Trade, Industry and Energy (MOTIE), Republic of Korea (Grant no. 10045216 )”. The authors thank SEMATECH for assistance with STI patterned wafer preparation. Publisher Copyright: {\textcopyright} 2014 Elsevier B.V.",

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doi = "10.1016/j.jcrysgro.2014.01.027",

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AU - Kim, S. W.

AU - Cho, Y. D.

AU - Shin, C. S.

AU - Park, W. K.

AU - Kim, D. H.

AU - Ko, D. H.

N1 - Funding Information: This work was financially supported by the “ R&D Program for Industrial Core Technology funded by the Ministry of Trade, Industry and Energy (MOTIE), Republic of Korea (Grant no. 10045216 )”. The authors thank SEMATECH for assistance with STI patterned wafer preparation. Publisher Copyright: © 2014 Elsevier B.V.

PY - 2014/9/1

Y1 - 2014/9/1

N2 - The defects of GaAs layers grown on Si (001) substrate with patterned SiO2structures were investigated using transmission electron microscopy. The compressive strain along the 〈110〉 direction was induced in selectively grown GaAs epilayers.The defects such as stacking faults or microtwins were trapped near the GaAs/Si interface, over which defect free GaAs regions were formed from the middle of trench walls. It is suggested that the residual compressive strain in defect free GaAs layers is due to the patterned SiO2structures.

AB - The defects of GaAs layers grown on Si (001) substrate with patterned SiO2structures were investigated using transmission electron microscopy. The compressive strain along the 〈110〉 direction was induced in selectively grown GaAs epilayers.The defects such as stacking faults or microtwins were trapped near the GaAs/Si interface, over which defect free GaAs regions were formed from the middle of trench walls. It is suggested that the residual compressive strain in defect free GaAs layers is due to the patterned SiO2structures.

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JF - Journal of Crystal Growth

ER -

Defect analyses of selective epitaxial grown GaAs on STI patterned (0 0 1) Si substrates

Abstract

Bibliographical note

All Science Journal Classification (ASJC) codes

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