Decoupling the bias-stress-induced charge trapping in semiconductors and gate-dielectrics of organic transistors using a double stretched-exponential formula

Engineering

• Gate Dielectric 100%
• Dielectric Layer 87%
• Stress Effects 50%
• Activation Energy 37%
• Organic Field Effect Transistors 37%
• Transistor 25%
• Critical Role 25%
• Induced Charge 25%
• Characteristic Time 25%
• Analysis Method 12%
• Self-Assembled Monolayers 12%
• Early Stage 12%
• Model System 12%
• Performance 12%
• Events 12%
• Guideline 12%

Chemistry

• Semiconductor 87%
• Reaction Activation Energy 37%
• Trapping 25%
• Self Assembled Monolayer 12%
• Decoupling 12%
• Procedure 12%
• Analytical Method 12%
• Physical Property 12%

Physics

• Semiconductor 87%
• Sides 37%
• Performance 12%
• Independent Variables 12%
• Events 12%
• Parameter 12%
• Decay 12%
• Validity 12%