DC and large-signal RF performance of recessed gate GaN MESFETs fabricated by the photoelectrochemical etching process

Engineering

• Etching Process 66%
• Performance 66%
• Operating Frequency 33%
• Harmonic Balance 33%
• Power Added Efficiency 33%
• Temperature 33%
• Models 33%
• Characteristics 33%

Chemistry

• Device 100%
• Saturation 66%
• Drain Current 33%
• Fluorescence Maxima 33%
• Procedure 33%
• Reaction Temperature 33%

Physics

• Performance 66%
• Temperature 33%
• Model 33%