Abstract
In this paper, we report on the DC and large-signal RF performance of recessed gate GaN MESFETs fabricated using the photoelectrochemical etching process. The fabricated GaN MESFET exhibits a current saturation at VDS = 4 V and a pinch-off at VGS = -3 V. The peak drain current of the device is about 230 mA/mm at 300 K and does not significantly change with temperature up to 500 K operation. The fT and fmax from the device are 6.35 GHz and 10.25 GHz, respectively. The experimental device characteristics were compared with the results obtained by the large-signal RF model utilizing the harmonic balance techniques. The simulated power added efficiency (PAE) was about 40% at an operating frequency of 4 GHz.
| Original language | English |
|---|---|
| Pages (from-to) | II/- |
| Journal | Materials Science Forum |
| Volume | 338 |
| Publication status | Published - 2000 |
| Event | ICSCRM '99: The International Conference on Silicon Carbide and Related Materials - Research Triangle Park, NC, USA Duration: 1999 Oct 10 → 1999 Oct 15 |
All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering